An ab initio prediction study of the electronic structure and elastic properties of V3GeC2

Guobing Ying,Fengchen Ma,Lin Su,Xiaodong He,Cheng Zhang,Zhonghua Dai,Hong Luo,Shanyi Du,Cheng Wang
DOI: https://doi.org/10.2298/PAC1702082Y
2017-01-01
Processing and Application of Ceramics
Abstract:The electronic structure and elastic properties of the ternary layered carbide V3GeC2 were investigated by the first-principle plane-wave pseudopotential total energy calculation method based on density functional theory. It is found that the computed P6(3)/mmc lattice constants and internal coordinates are a = 2.9636 angstrom, c = 17.2256 angstrom and zV(2) = 0.1325, zC = 0.5712, respectively. The predictable cohesive energy of V3GeC2 reflects that it could be a stable M(n+1)AX(n) phase like Ti3GeC2 and V2GeC, while the band structure shows that the V3GeC2 has anisotropic electrical conductivity, with a high density of states at the Fermi energy. The V3GeC2 exhibits potential anisotropic elastic properties, as well as self-lubricating and ductile behaviour, related to the V-Ge bonds being relatively weaker than the V-C bonds.
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