Abstract:Two-dimensional (2D) ferromagnetic semiconductors show great interest due to their potential applications for the nanoscale electronic devices. In this work, the Janus 2$H$-Gd$XY$ ($X$, $Y$=Cl, Br, I, $X$$\neq$$Y$) monolayers with rare-earth element Gd (4$f^{7}$+5$d^{1}$) are predicted by the first-principles calculations. Small exfoliation energy of less than 0.25 J/m$^{2}$ and excellent dynamical/thermal stabilities can be confirmed for the Janus 2$H$-Gd$XY$ monolayers, which exhibit the bipolar magnetic semiconductor character with high Curie temperatures above 260 K and large spin-orbit coupling effect, and can be further transformed into the half-semiconductor phase under proper tensile strains (5-6\%). In addition, the in-plane magnetic anisotropy can be observed in the 2$H$-GdICl and 2$H$-GdIBr monolayers. On the contrary, the 2$H$-GdBrCl monolayer exhibits perpendicular magnetic anisotropy character, which originates from the competition between Gd-$p$/$d$ and halogen atom-$p$ orbitals. Calculated valley optical actions of the Janus 2$H$-Gd$XY$ monolayers exhibit distinguished valley-selective circular dichroisms, which is expected to realize the special valley excitation by polarized light. Spontaneously valley-Zeeman effect in the valance band for the Janus 2$H$-Gd$XY$ monolayers induces a giant valley splitting of 60-120 meV, which is also robust against various external biaxial strains. Tunable valley degree of freedom in the Janus 2$H$-Gd$XY$ systems is very necessary for encoding and processing information.

Novel two-dimensional Janus β-Ge2XY (X/Y = S, Se, Te) structures: first-principles examinations

Electronic, mechanical, optical and photocatalytic properties of two-dimensional Janus XGaInY (X, Y ;= S, Se and Te) monolayers

Using in-plane anisotropy to engineer Janus monolayers of rhenium dichalcogenides

2D V–VI Binary Nanosheets with Square Lattice: A Theoretical Investigation

First principles design of 2 dimensional Nickel dichalcogenide Janus materials NiXY (X,Y=S,Se,Te)

Investigation of anisotropic mechanical, electronic, and charge carrier transport properties of germanium-pnictogen monolayers

New stable 2D and 3D GeC2 crystal structures predicted by first-principles study

Unexpected Band Gap Evolution and High Carrier Mobility Sparked by the Orbital Variation in Two-Dimensional GaGeX (X = S, Se, Te)

First principles prediction of two-dimensional Janus STiXY 2 (X = Si, Ge; Y = N, P, As) materials

A first-principles prediction of the structural, electronic, transport and photocatalytic properties of GaGeX3 (X = S, Se, Te) monolayers

First-principles study of mechanical, electronic and optical properties of Janus structure in transition metal dichalcogenides

First-principles investigations of structural, electronic and optical properties of janus GaXY (X/Y S, Se, Te)/GeAs van der Waals heterostructures for photovoltaic applications

First-principles Calculations on the Mechanical, Electronic, Magnetic and Optical Properties of Two-Dimensional Janus Cr_2TeX (X= P, As, Sb) Monolayers

Half‐Metallic Ferromagnetism in 2D Janus Monolayers: Mn2GeX (X = As, Sb)

Structural, Electronic and Optical Properties of Monolayer InGeX3 (X = S, Se, Te) by First-Principles Calculations

First-principles calculations on the mechanical, electronic, magnetic and optical properties of two-dimensional Janus Cr$_2$TeX (X= P, As, Sb) monolayers

High-Pressure Synthesis and Characterization of $β$-GeSe - A Semiconductor with Six-Rings in an Uncommon Boat Conformation

Valley-Dependent Electronic Properties of Metal Monochalcogenides GaX and Janus Ga2XY (X, Y = S, Se, and Te)

Two-Dimensional Si-Ge Monolayers: Stabilities, Structures and Electronic Properties

Rashba-type spin splitting and transport properties of novel Janus XWGeN2 (X = O, S, Se, Te) monolayers

Two-dimensional rare-earth Janus 2$\textit{H}$-Gd$\textit{XY}$ ($\textit{X}$,$\textit{Y}$=Cl, Br, I, $\textit{X}$$\neq$$\textit{Y}$) monolayers: Bipolar ferro-magnetic semiconductors with high Curie temperature and large valley polarization