Abstract:The vertically stacked van der Waals (vdW) heterostructures provide a promising platform not only in the band alignment but also constitute a fertile ground for the fundamental science and tremendous practical interest towards different device applications. Beyond most two-dimensional (2D) materials being intrinsically non-magnetic, CrI3 is a novel material with vdW bonded layer dependent magnetism, promising the potential spintronics applications. However, for prominent device applications, heterostructure is commonly fabricated and it is necessary to examine the effect of the interface or contact atoms over the magnetic properties of the heterostructure. And most importantly, the effect of assembly stress on the electronic and magnetic properties remains not clear. In this study, we design a vdW heterostructure from the two-chromium tri-halides called CrI3/Br3Cr2I3 heterostructure, where the Janus of the CrI3 monolayer called Br3Cr2I3 is also an intrinsically 2D magnetic material. Using the state-of-the-art first principles calculations, we uncover the effects of contact atoms as well as external pressure over the electronic and magnetic properties of the CrI3/Br3Cr2I3 heterostructure. It is found that the heterostructure transits from antiferromagnetic (AFM) to ferromagnetic (FM) ground state with pressure larger than certain threshold. We also investigate the magneto-crystalline anisotropy energy (MAE) of the CrI3/Br3Cr2I3 heterostructure. Remarkably, it is found that the MAE is significantly influenced by both the stacking as well as the contact atoms, which is abruptly and inconsistently varying by the contact atoms and external pressure. Further, we also reveal the correlation between MAE and the polar angle. The pressure regulated magnetic properties of the CrI3/Br3Cr2I3 heterostructures as revealed in this study highlight its potential applications for spintronic applications devices.

Out-of-Plane Pressure and Electron Doping Inducing Phase and Magnetic Transition in GeC/CrS2/GeC van der Waals Heterostructure

Magnetism and Magneto-optical Effects in Bulk and Few-layer CrI$_3$: A Theoretical GGA + U Study

Tunable electronic structure and magnetic anisotropy in bilayer ferromagnetic semiconductor Cr 2 Ge 2 Te 6

Tunable electronic structure and magnetic anisotropy in bilayer ferromagnetic semiconductor Cr2Ge2Te6

Pressure driven magnetic phase change in CrI3/Br3Cr2I3 heterostructure

Significant Enhancement of Magnetic Anisotropy and Conductivity in GaN/CrI3 Van Der Waals Heterostructures Via Electrostatic Doping

Significant enhancement of magnetic anisotropy and conductivity in GaN / CrI 3 van der Waals heterostructures via electrostatic doping

Switching 2D magnetic states via pressure tuning of layer stacking

Robust ferromagnetism in two-dimensional GeC/CrN heterobilayers

Magnetic and Electronic Switch in Metal Intercalated Two-Dimensional GeP$_3$

First-principles Study of Structural, Thermodynamic, Elastic, and Magnetic Properties of Cr2GeC under Pressure and Temperature

Pressure-Induced Structural Phase Transition and a Special Amorphization Phase of Two-Dimensional Ferromagnetic Semiconductor Cr2Ge2Te6

Magnetic and Electronic Properties of Cr2Ge2Te6 Monolayer by Strain and Electric-Field Engineering

Interface depended electronic and magnetic properties of vertical CrI3/WSe2 heterostructures

Pressure evolution of electronic structure and magnetism in the layered van der Waals ferromagnet CrGeTe$_3$

Diverse electronic and magnetic properties of CrS2 enabling novel strain-controlled 2D lateral heterostructure spintronic devices

Formation of Ohmic contacts between ferromagnetic Cr 2 Ge 2 Te 6 and two-dimensional metals.

Formation of Ohmic contacts between ferromagnetic Cr<sub>2</sub>Ge<sub>2</sub>Te<sub>6</sub> and two-dimensional metals

Formation of Ohmic contacts between ferromagnetic Cr2Ge2Te6and two-dimensional metals

Tunable Spin States in the Two-Dimensional Magnet CrI3

Band gap crossover and insulator–metal transition in the compressed layered CrPS4