Abstract:The latest discovery of ferromagnetism in atomically thin films of semiconductors Cr$_2$Ge$_2$Te$_6$ and CrI$_3$ has unleashed numerous opportunities for fundamental physics of magnetism in two-dimensional (2D) limit and also for technological applications based on 2D magnetic materials. In this paper, we present a comprehensive theoretical study of the magnetic, electronic, optical and magneto-optical(MO) properties of multilayers [monolayer(ML), bilayer and trilayer] and bulk CrI$_3$, based on the density functional theory with the generalized gradient approximation plus on-site Coulomb repulsion scheme. Interestingly, all the structures are found to be single-spin ferromagnetic(FM) semiconductors. They all have a large out-of-plane magnetic anisotropy energy(MAE) of $\sim$0.5 meV/Cr. These large MAEs suppress transverse spin fluctuations and thus stabilize long-range magnetic orders at finite temperatures down to the ML limit. They also exhibit strong MO effects with their Kerr and Faraday rotation angles being comparable to that of best-known bulk MO materials. The shape and position of the main features in the optical and MO spectra are found to be nearly thickness-independent although the magnitude of Kerr rotation angles increases monotonically with the film thickness. Magnetic transition temperatures estimated based on calculated exchange coupling parameters, calculated optical conductivity, MO Kerr and Faraday rotation angles agree quite well with available experimental data. The calculated MAE as well as optical and MO properties are analyzed in terms of the calculated orbital-decomposed densities of states, band state symmetries and dipole selection rules. Our findings of large out-of-plane MAEs and strong MO effects in these single-spin FM semiconducting CrI$_3$ ultrathin films suggest that they will find valuable applications in semiconductor MO and spintronic nanodevices.

Magnetic and Electronic Properties of Cr2Ge2Te6 Monolayer by Strain and Electric-Field Engineering

Magnetism and Magneto-optical Effects in Bulk and Few-layer CrI$_3$: A Theoretical GGA + U Study

The induction of half-metallicity and enhanced ferromagnetism in a Cr<sub>2</sub>Ge<sub>2</sub>Te<sub>6</sub> monolayer <i>via</i> electron doping and alkali metal adsorption

Tunable Electronic Properties and Enhanced Ferromagnetism in Cr2Ge2Te6 Monolayer by Strain Engineering

Magnetic anisotropy of the single-crystalline ferromagnetic insulator Cr2Ge2Te6

Electric Field Effect in Multilayer Cr 2 Ge 2 Te 6 : a Ferromagnetic 2D Material

Electric Field Effect in Multilayer Cr2Ge2Te6: a Ferromagnetic Two-Dimensional Material

Tunable electronic structure and magnetic anisotropy in bilayer ferromagnetic semiconductor Cr2Ge2Te6

Tunable electronic structure and magnetic anisotropy in bilayer ferromagnetic semiconductor Cr 2 Ge 2 Te 6

Enhanced Room Temperature Ferromagnetism in Highly Strained 2D Semiconductor Cr 2 Ge 2 Te 6

Tailing Magnetoelectric properties of Cr2Ge2Te6 by Engineering Covalently bonded Cr Self-intercalation: Ferromagnetic Half-metal

Magnetic anisotropy and ferroelectric-driven magnetic phase transition in monolayer Cr 2 Ge 2 Te 6

Atomic scale electronic structure of the ferromagnetic semiconductor Cr 2 Ge 2 Te 6 .

Tailing the Magnetoelectric Properties of Cr 2 Ge 2 Te 6 by Engineering Covalently Bonded Cr Self-Intercalation: Ferromagnetic Half-Metal

Insight into Strain and Electronic Correlation Dependent Magnetism in Monolayer 1T-Crte2

Robust ferromagnetism in two-dimensional GeC/CrN heterobilayers

Two dimensional ferromagnetic semiconductor: monolayer CrGeS<sub>3</sub>

Van Der Waals Lattice-Induced Colossal Magnetoresistance in Cr2Ge2Te6 Thin Flakes.

Giant Contribution of the Ligand States to the Magnetic Properties of the Cr2Ge2Te6 Monolayer

Spin filtering effect in intrinsic 2D magnetic semiconductor Cr2Ge2Te6

Cr2XTe4 (X = Si, Ge) Monolayers: a New Type of Two-Dimensional High-T C Ising Ferromagnetic Semiconductors with a Large Magnetic Anisotropy