Abstract:Two-dimensional (2D) ferromagnets with out-of-plane (OOP) magnetic anisotropy are potential candidates for realizing the next-generation memory devices with ultra-low power consumption and high storage density. However, a scalable approach to synthesize 2D magnets with OOP anisotropy directly on the complimentary metal-oxide semiconductor (CMOS) compatible substrates has not yet been mainly explored, which hinders the practical application of 2D magnets. This work demonstrates a cascaded space confined chemical vapor deposition (CS-CVD) technique to synthesize 2D FexGeTe2 ferromagnets. The weight fraction of iron (Fe) in the precursor controls the phase purity of the as-grown FexGeTe2. As a result, high-quality Fe3GeTe2 and Fe5GeTe2 flakes have been grown selectively using the CS-CVD technique. Curie temperature (TC) of the as-grown FexGeTe2 can be up to ∼ 280 K, nearly room temperature. The thickness and temperature-dependent magnetic studies on the Fe5GeTe2 reveal a 2D Ising to 3D XY behavior. Also, Terahertz spectroscopy experiments on Fe5GeTe2 display the highest conductivity among other FexGeTe2 2D magnets. The results of this work indicate a scalable pathway for the direct growth and integration of 2D ternary magnets on CMOS-based substrates to develop spintronic memory devices.

Magnetic anisotropy and ferroelectric-driven magnetic phase transition in monolayer Cr 2 Ge 2 Te 6

Magnetism and Magneto-optical Effects in Bulk and Few-layer CrI$_3$: A Theoretical GGA + U Study

Magnetic and Electronic Properties of Cr2Ge2Te6 Monolayer by Strain and Electric-Field Engineering

Magnetic anisotropy of the single-crystalline ferromagnetic insulator Cr2Ge2Te6

Nonvolatile Electrical Control Of 2d Cr2ge2te6 And Intrinsic Half Metallicity In Multiferroic Hetero-Structures

Ab initio investigation of layered TMGeTe3 alloys for phase-change applications

Tunable electronic structure and magnetic anisotropy in bilayer ferromagnetic semiconductor Cr 2 Ge 2 Te 6

Tunable electronic structure and magnetic anisotropy in bilayer ferromagnetic semiconductor Cr2Ge2Te6

Tailing Magnetoelectric properties of Cr2Ge2Te6 by Engineering Covalently bonded Cr Self-intercalation: Ferromagnetic Half-metal

Temperature-dependent magnetic order of two-dimensional ferromagnetic Cr2Ge2Te6 single crystal

Manipulating Ferromagnetism in Few‐Layered Cr 2 Ge 2 Te 6

Phase-pure two-dimensional FexGeTe2 magnets with near-room-temperature TC

Atomic scale electronic structure of the ferromagnetic semiconductor Cr 2 Ge 2 Te 6 .

Van Der Waals Lattice-Induced Colossal Magnetoresistance in Cr2Ge2Te6 Thin Flakes.

Manipulating Ferromagnetism in Few‐Layered Cr2Ge2Te6

Pressure-Induced Structural Phase Transition and a Special Amorphization Phase of Two-Dimensional Ferromagnetic Semiconductor Cr2Ge2Te6

Tailing the Magnetoelectric Properties of Cr 2 Ge 2 Te 6 by Engineering Covalently Bonded Cr Self-Intercalation: Ferromagnetic Half-Metal

Spin glass behavior in amorphous Cr2Ge2Te6 phase-change alloy

Ferroelectricity-Driven Metallicity and Magnetic Skyrmions in van der Waals Cr2Ge2Te6/Hf2Ge2Te6 Multiferroic Heterostructure

Unraveling the electronic structure and magnetic transition evolution across monolayer, bilayer, and multilayer ferromagnetic Fe 3 GeTe 2

Coexisting Ferromagnetic-Antiferromagnetic State and Giant Anomalous Hall Effect in Chemical Vapor Deposition-Grown 2D Cr 5 Te 8