Band gap crossover and insulator–metal transition in the compressed layered CrPS4

Resta A. Susilo,Bo Gyu Jang,Jiajia Feng,Qianheng Du,Zhipeng Yan,Hongliang Dong,Mingzhi Yuan,Cedomir Petrovic,Ji Hoon Shim,Duck Young Kim,Bin Chen

DOI: https://doi.org/10.1038/s41535-020-00261-x

IF: 6.856

2020-08-18

npj Quantum Materials

Abstract:Abstract Two-dimensional van der Waals (vdW) magnetic materials have emerged as possible candidates for future ultrathin spintronic devices, and finding a way to tune their physical properties is desirable for wider applications. Owing to the sensitivity and tunability of the physical properties to the variation of interatomic separations, this class of materials is attractive to explore under pressure. Here, we present the observation of direct to indirect band gap crossover and an insulator–metal transition in the vdW antiferromagnetic insulator CrPS 4 under pressure through in-situ photoluminescence, optical absorption, and resistivity measurements. Raman spectroscopy experiments revealed no changes in the spectral feature during the band gap crossover whereas the insulator–metal transition is possibly driven by the formation of the high-pressure crystal structure. Theoretical calculations suggest that the band gap crossover is driven by the shrinkage and rearrangement of the CrS 6 octahedra under pressure. Such high tunability under pressure demonstrates an interesting interplay between structural, optical and magnetic degrees of freedom in CrPS 4 , and provides further opportunity for the development of devices based on tunable properties of 2D vdW magnetic materials.

materials science, multidisciplinary,physics, applied, condensed matter,quantum science & technology