Abstract:The vertically stacked van der Waals (vdW) heterostructures provide a promising platform not only in the band alignment but also constitute a fertile ground for the fundamental science and tremendous practical interest towards different device applications. Beyond most two-dimensional (2D) materials being intrinsically non-magnetic, CrI3 is a novel material with vdW bonded layer dependent magnetism, promising the potential spintronics applications. However, for prominent device applications, heterostructure is commonly fabricated and it is necessary to examine the effect of the interface or contact atoms over the magnetic properties of the heterostructure. And most importantly, the effect of assembly stress on the electronic and magnetic properties remains not clear. In this study, we design a vdW heterostructure from the two-chromium tri-halides called CrI3/Br3Cr2I3 heterostructure, where the Janus of the CrI3 monolayer called Br3Cr2I3 is also an intrinsically 2D magnetic material. Using the state-of-the-art first principles calculations, we uncover the effects of contact atoms as well as external pressure over the electronic and magnetic properties of the CrI3/Br3Cr2I3 heterostructure. It is found that the heterostructure transits from antiferromagnetic (AFM) to ferromagnetic (FM) ground state with pressure larger than certain threshold. We also investigate the magneto-crystalline anisotropy energy (MAE) of the CrI3/Br3Cr2I3 heterostructure. Remarkably, it is found that the MAE is significantly influenced by both the stacking as well as the contact atoms, which is abruptly and inconsistently varying by the contact atoms and external pressure. Further, we also reveal the correlation between MAE and the polar angle. The pressure regulated magnetic properties of the CrI3/Br3Cr2I3 heterostructures as revealed in this study highlight its potential applications for spintronic applications devices.

Pressure-driven Switching of Magnetism in Layered CrCl3.

Switching 2D magnetic states via pressure tuning of layer stacking

Pressure-enhanced ferromagnetism in layered CrSiTe3 flakes.

Pressure driven magnetic phase change in CrI3/Br3Cr2I3 heterostructure

Pressure-controlled Magnetism in 2D Molecular Layers

Pressure induced semiconductor-like to metal transition and linear magnetoresistance in Cr2S2.88 single crystal

Pressure-Enhanced Ferromagnetism in Layered CrSiTe 3 Flakes

Electrical control of 2D magnetism in bilayer CrI3

Pressure-induced superconductivity and structural transition in ferromagnetic CrSiTe 3

Pressure-controlled interlayer magnetism in atomically thin CrI 3

Pressure-driven structural phase transitions and metallization in the two-dimensional ferromagnetic semiconductor CrBr 3

Controlling Spin Orientation and Metamagnetic Transitions in Anisotropic van der Waals Antiferromagnet CrPS<sub>4</sub> by Hydrostatic Pressure

Pressure-Induced Structural Phase Transition and Enhanced Interlayer Coupling in Two-Dimensional Ferromagnet CrSiTe 3

Pressure-induced Spin Reorientation Transition in Layered Ferromagnetic Insulator Cr2Ge2Te6

Metamagnetic Transitions in Few-Layer CrOCl Controlled by Magnetic Anisotropy Flipping

Dimensional Crossover Tuned by Pressure in Layered Magnetic NiPS3

Pressure induced metallization with absence of structural transition in layered MoSe2

Band gap crossover and insulator–metal transition in the compressed layered CrPS4

Pressure induced metallization with absence of structural transition in layered molybdenum diselenide

Unusual Mott Transition in Multiferroic PbCrO 3