Pressure-controlled interlayer magnetism in atomically thin CrI 3

Tingxin Li,Shengwei Jiang,Nikhil Sivadas,Zefang Wang,Yang Xu,Daniel Weber,Joshua E. Goldberger,Kenji Watanabe,Takashi Taniguchi,Craig J. Fennie,Kin Fai Mak,Jie Shan
DOI: https://doi.org/10.1038/S41563-019-0506-1
IF: 41.2
2019-01-01
Nature Materials
Abstract:Stacking order can influence the physical properties of two-dimensional van der Waals materials 1 , 2 . Here we applied hydrostatic pressure up to 2 GPa to modify the stacking order in the van der Waals magnetic insulator CrI 3 . We observed an irreversible interlayer antiferromagnetic-to-ferromagnetic transition in atomically thin CrI 3 by magnetic circular dichroism and electron tunnelling measurements. The effect was accompanied by a monoclinic-to-rhombohedral stacking-order change characterized by polarized Raman spectroscopy. Before the structural change, the interlayer antiferromagnetic coupling energy can be tuned up by nearly 100% with pressure. Our experiment reveals the interlayer ferromagnetic ground state, which is established in bulk CrI 3 but not observed in native exfoliated thin films. The observed correlation between the magnetic ground state and the stacking order is in good agreement with first principles calculations 3 – 8 and suggests a route towards nanoscale magnetic textures by moiré engineering 3 , 9 .
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