Abstract:Abstract Bandpass filters with high frequency and wide bandwidth are indispensable parts of the fifth-generation telecommunication technologies, and currently, they are mainly based on surface and bulk acoustic wave resonators. Owing to its high mechanical strength, excellent stability at elevated temperatures, good thermal conductivity, and compatibility with complementary metal-oxide-semiconductor technology, aluminum nitride (AlN) becomes the primary piezoelectric material for high-frequency resonators. This review briefly introduces the structures and key performance parameters of the acoustic resonators. The common filter topologies are also discussed. In particular, research progresses in the piezoelectric AlN layer, electrodes, and substrates of the resonators are elaborated. Increasing the electromechanical coupling constant is the main concern for the AlN film. To synthesize AlN in single-crystalline or poly-crystalline with a high intensity of (0002) orientation, and alloy the AlN with other elements are two effective approaches. For the substrates and bottom electrodes, lattice and thermal expansion mismatch, and surface roughness are critical for the synthesis of a high-crystal-quality piezoelectric layer. The electrodes with low electrical resistance, large acoustic-impedance mismatch to the piezoelectric layer, and low density are ideal to reduce insertion loss. Based on the research progress, several possible research directions in the AlN-based filters are suggested at the end of the paper.

AlN Piezoelectric Thin Films for Energy Harvesting and Acoustic Devices

Preparation Technique Of Aln Piezoelectric Thin Film

A Review of the Recent Applications of Aluminum Nitride-Based Piezoelectric Devices

Preparation, Characterization, and Application of AlN/ScAlN Composite Thin Films

Piezoelectric aluminum nitride thin-films: A review of wet and dry etching techniques

High speed surface acoustic wave and laterally excited bulk wave resonator based on single-crystal non-polar AlN film

Reactive Sputtering of Aluminum Nitride (002) Thin Films for Piezoelectric Applications: A Review

Integration of diamond-like carbon and AlN for acoustic wave devices

Systematic approach for high piezoelectric AlN deposition

Growth of AIN Films by RF Reactive Magnetron Sputtering for Film-Bulk-Acoustic-Wave-Resonator Fabrication

Aluminum Nitride Thin Film Based Reconfigurable Integrated Photonic Devices

Flexible Surface Acoustic Wave Device with Aln Film on Polymer Substrate

Thin Film Piezoelectric Nanogenerator Based on (100)-Oriented Nanocrystalline AlN Grown by Pulsed Laser Deposition at Room Temperature.

CMOS-Integrated Aluminum Nitride MEMS: A Review

Preparation of Aln Thin Films for Film Bulk Acoustic Resonator Application by Radio Frequency Sputtering

Growth-microstructure-thermal property relations in AlN thin films

Characterisation of Aluminium Nitride Films and Surface Acoustic Wave Devices for Microfluidic Applications

Growth and Characterization of Polyimide-Supported AlN Films for Flexible Surface Acoustic Wave Devices

High Quality Silicon-Based Aln Thin Films For Mems Application

Surface and bulk acoustic wave resonators based on aluminum nitride for bandpass filters

Aluminum nitride photonic integrated circuits: from piezo-optomechanics to nonlinear optics