Abstract:A mechanistic understanding of interactions be-tween atomically thin two-dimensional (2D) transition-metal dichalcogenides (TMDs) and their growth substrates is important for achieving the unidirectional alignment of nuclei and seamless stitching of 2D TMD domains and thus 2D wafers. In this work, we conduct a cross-sectional scanning transmission electron microscopy (STEM) study to investigate the atomic-scale nucleation and early stage growth behaviors of chemical vapor deposited monolayer (ML-) MoS2 and molecular beam epitaxy ML-MoSe2 on a Au(111) substrate. Statistical analysis reveals the majority of as-grown domains, i.e., similar to 88% for MoS2 and 90% for MoSe2, nucleate on surface terraces, with the rest (i.e., similar to 12% for MoS2 and 10% for MoSe2) on surface steps. Moreover, within the latter case, step-associated nucleation, similar to 64% of them are terminated with a Mo-zigzag edge in connection with the Au surface steps, with the rest (similar to 36%) being S-zigzag edges. In conjunction with ab initio density functional theory calculations, the results confirm that van der Waals epitaxy, rather than the surface step guided epitaxy, plays deterministic roles for the realization of unidirectional ML-MoS2 (MoSe2) domains on a Au(111) substrate. In contrast, surface steps, particularly their step height, are mainly responsible for the integrity and thickness of MoS2/MoSe2 films. In detail, it is found that the lateral growth of monolayer thick MoS2/MoSe2 domains only proceeds across mono-Au-atom high surface steps (similar to 2.4 angstrom), but fail for higher ones (bi-Au atom step and higher) during the growth. Our cross-sectional STEM study also confirms the existence of considerable compressive residual strain that reaches similar to 3.0% for ML-MoS2/MoSe2 domains on Au(111). The present study aims to understand the growth mechanism of 2D TMD wafers.

Determination of the Thickness of Two-Dimensional Transition-Metal Dichalcogenide by the Raman Intensity of the Substrate

Determining layer number of two dimensional flakes of transition-metal dichalcogenides by the Raman intensity from substrate

Atomistic Insight into the Epitaxial Growth Mechanism of Single-Crystal Two-Dimensional Transition-Metal Dichalcogenides on Au(111) Substrate

Wafer‐scale Single‐crystalline MoSe2 and WSe2 Monolayers Grown by Molecular‐beam Epitaxy at Low‐temperature — the Role of Island‐substrate Interaction and Surface Steps

Two-Dimensional Molybdenum Tungsten Diselenide Alloys: Photoluminescence, Raman Scattering, and Electrical Transport

Quantitative Raman Spectrum and Reliable Thickness Identification for Atomic Layers on Insulating Substrates

Rapid Thickness Identification Methodology For Two-Dimensional MoS<sub>2</sub> and In<sub>2</sub>Se<sub>3</sub> Nanosheets Using Optical Microscopy

Rapid and reliable thickness identification of two-dimensional nanosheets using optical microscopy.

Rapid Thickness Identification Methodology for Two-Dimensional MoS2 and In2 Se3 Nanosheets Using Optical Microscopy

Thickness Determination of MoS2, MoSe2, WS2 and WSe2 on Transparent Stamps Used for Deterministic Transfer of 2D Materials

High-Throughput Identification and Statistical Analysis of Atomically Thin Semiconductors

Thickness identification of two-dimensional materials by optical imaging.

Thickness-dependent variations of atomic vibration, band-edge excitonic emission, and valleytronic response in layered Mo 0.55 W 0.45 S 2 ternary compounds

Layer Dependent Interfacial Transport and Optoelectrical Properties of MoS2 on Ultra-flat Metals

Anomalous Raman Spectra and Thickness Dependent Electronic properties of WSe2

Determining by Raman spectroscopy the average thickness and N -layer-specific surface coverages of MoS 2 thin films with domains much smaller than the laser spot size

Optical Determination of Layered-materials InSe Thickness via RGB Contrast Method and Regression Analysis

Unveiling the Origin of Anomalous Low-Frequency Raman Mode in CVD-grown Monolayer WS2

Controllable growth of multilayered XSe 2 (X = W and Mo) for nonlinear optical and optoelectronic applications

Lattice dynamics in mono- and few-layer sheets of WS2 and WSe2

Reduction in Thermal Conductivity of Monolayer WS2 Caused by Substrate Effect