Abstract:CONSPECTUS: After the discovery of graphene and the development of powerful exfoliation techniques, experimental preparation of two-dimensional (2D) crystals can be expected for any layered material that is known to chemistry. Besides graphene and hexagonal boron nitride (h-BN), transition metal chalcogenides (TMC) are among the most studied ultrathin materials. In particular, single-layer MoS2, a direct band gap semiconductor with ∼1.9 eV energy gap, is popular in physics and nanoelectronics, because it nicely complements semimetallic graphene and insulating h-BN monolayer as a construction component for flexible 2D electronics and because it was already successfully applied in the laboratory as basis material for transistors and other electronic and optoelectronic devices. Two-dimensional crystals are subject to significant quantum confinement: compared with their parent layered 3D material, they show different structural, electronic, and optical properties, such as spontaneous rippling as free-standing monolayer, significant changes of the electronic band structure, giant spin-orbit splitting, and enhanced photoluminescence. Most of those properties are intrinsic for the monolayer and already absent for two-layer stacks of the same 2D crystal. For example, single-layer MoS2 is a direct band gap semiconductor with spin-orbit splitting of 150 meV in the valence band, while the bilayer of the same material is an indirect band gap semiconductor without observable spin-orbit splitting. All these properties have been observed experimentally and are in excellent agreement with calculations based on density-functional theory. This Account reports theoretical studies of a subgroup of transition metal dichalcogenides with the composition MX2, with M = Mo, or W and X = Se or S, also referred to as "MoWSeS materials". Results on the electronic structure, quantum confinement, spin-orbit coupling, spontaneous monolayer rippling, and change of electronic properties in the presence of an external electric field are reported. While all materials of the MoWSeS family share the same qualitative properties, their individual values can differ strongly, for example, the spin-orbit splitting in WSe2 reaches the value of 428 meV, nearly three times that of MoS2. Further, we discuss the effect of strain on the electronic properties (straintronics). While MoWSeS single layers are very robust against external electric fields, bilayers show a linear reduction of the band gap, even reaching a semiconductor-metal phase transition, and an increase of the spin-orbit splitting from zero to the monolayer value at rather small fields. Strain is yet another possibility to control the band gap in a linear way, and MoWSeS monolayers become metallic at strain values of ∼10%. The density-functional based tight-binding model is a useful tool to investigate the electronic and structural properties, including electron conductance, of large MoS2 structures, which show spontaneous rippling in finite-temperature molecular dynamics simulations. Structural defects in MoS2 result in anisotropy of the electric conductivity. Finally, DFT predictions on the properties of noble metal dichalcogenides are presented. Most strikingly, 1T PdS2 is an indirect band gap semiconductor in its monolayer form but becomes metallic as a bilayer.

Thickness-dependent variations of atomic vibration, band-edge excitonic emission, and valleytronic response in layered Mo 0.55 W 0.45 S 2 ternary compounds

Two-Dimensional Molybdenum Tungsten Diselenide Alloys: Photoluminescence, Raman Scattering, and Electrical Transport

Mechanical Properties of Monolayer Ternary Transitional Metal Dichalogenides MoS2xTe2(1 − X): A Molecular Dynamics Study

Fabrication and Optical Performance of Mo1-xWxS2 Monolayer with Different Composition Ranges Via One-Step Chemical Vapor Deposition Approach

An optical spectroscopic study on two-dimensional group-VI transition metal dichalcogenides.

Electronic Structures of Monolayer Binary and Ternary 2D Materials: MoS2, WS2, Mo1−xCrxS2, and W1−xCrxS2 Using Density Functional Theory Calculations

Unveiling the layer-dependent electronic properties in transition-metal dichalcogenide heterostructures assisted by machine learning

Electronic structure and dynamic properties of two-dimensional W Mo1−S2 ternary alloys from first-principles calculations

Transition Metal Chalcogenides: Ultrathin Inorganic Materials with Tunable Electronic Properties

Tuning Interlayer Exciton Emission with TMD Alloys in van der Waals Heterobilayers of Mo0.5W0.5Se2 and Its Binary Counterparts

Room Temperature Bound Excitons and Strain-Tunable Carrier Mobilities in Janus Monolayer Transition-Metal Dichalcogenides.

Synthesis and Characterization of 2D Ternary Compound TMD Materials Ta3VSe8

Synthesis and Characterization of 2D Transition Metal Dichalcogenides: Recent Progress from a Vacuum Surface Science Perspective

Temperature-dependent photoluminescence emission and Raman scattering from Mo1-x W x S2 monolayers.

Simulation of Transition Metal Dichalcogenides

Two-Dimensional Transition Metal Dichalcogenides: Clusters, Ribbons, Sheets and More

Intercalation-Induced Disintegrated Layer-by-Layer Growth of Ultrathin Ternary Mo(Te1-xSx)2 Plates.

Temperature dependence of photoluminescence in twisted heterobilayers of transition-metal dichalcogenides

Sulfur Vacancy Related Optical Transitions in Graded Alloys of MoxW1‐xS2 Monolayers

Observation of Strong Valley Magnetic Response in Monolayer Transition Metal Dichalcogenide Alloys of Mo0.5W0.5Se2 and Mo0.5W0.5Se2/WS2 Heterostructures

Electronic, optical and transport properties of van der Waals Transition-metal Dichalcogenides Heterostructures: A First-principle Study