Electronic structure and dynamic properties of two-dimensional W Mo1−S2 ternary alloys from first-principles calculations

Dongxue Meng,Mingkai Li,Debing Long,Yang Cheng,Pan Ye,Wang Fu,E Wentao,Wei Luo,Yunbin He,Wentao E
DOI: https://doi.org/10.1016/j.commatsci.2020.109797
IF: 3.572
2020-09-01
Computational Materials Science
Abstract:Two-dimensional transition metal dichalcogenide materials are of great interest for the development of semiconductor devices because of their diverse properties. In this paper, we discovered the ground states of W x Mo1− x S2 alloys and discussed their electronic structures and phonon properties in detail by the cluster expansion method and the first principle calculation. Three ground-state structures of W x Mo1− x S2 alloys, W1/3Mo2/3S2, W1/2Mo1/2S2, and W2/3Mo1/3S2, have low order–disorder phase transition temperatures, T 1/3 = 102.3 K, T 1/2 = 87.8 K, and T 2/3 = 102.2 K, estimated by mean field theory. Their bandgaps exhibit a nonlinear increase with increasing W content. All ground structures are dynamically stable without imagine frequency in phonon dispersion. W doping into single layer MoS2 leads low frequency optical modes hybriding with acoustic modes and lowering down the low frequency band due to larger mass of W atoms. All these may improve the developments of W x Mo1− x S2 alloys devices.
materials science, multidisciplinary
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