Abstract:Three-dimensional (3D) nanostructure is the key to the miniaturization of nonlinear photonic and electronic devices. Despite the continued scaling down of semiconductor manufacturing, the novel technology for nanostructure fabrication breaks the fundamental limitation of current complementary metal-oxide semiconductor (CMOS)-based technology for direct 3D silicon (Si) nanostructure fabrication is still challenging. Herein, by combining Ga+ FIB implantation and ICP dry etching processes, we proposed a novel Ga+ FIB implantation assisted maskless dry etching technology for directly fabrication of 3D Si nanostructure. We found that the Ga+ implanted amorphization layer formed in Si substrate acts as a "quasi-mask" for ICP dry etching process. The increase of Ga+ concentration in amorphization layer of Si substrate improved the etching resistance. Enabled by high resolution and flexibility of FIB, the proposed technology is capable of directly fabricating various 3D Si nanostructures, such as 3D nanoscale artificial bowtie arrays with sub-10 nm gaps, multi-scale 3D Si nanostructures with arbitrary patterns. More importantly, the proposed technology is compatible to current semiconductor manufacturing, along with its advantages of simplicity and high efficiency, enabling such a maskless dry etching process great potential in the fields of nonlinear photonics and micro-electronics.

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