Characterization of Molecular Nitrogen in III-V Compound Semiconductors by Near-Edge X-Ray Absorption Fine Structure and Photoemission Spectroscopies

A. Bozanic,Z. Majlinger,M. Petravic,Q. Gao,D. Llewellyn,C. Crotti,Y. -W. Yang
DOI: https://doi.org/10.1116/1.2929851
2008-01-01
Journal of Vacuum Science & Technology A Vacuum Surfaces and Films
Abstract:Formation of molecular nitrogen under low-energy nitrogen bombardment of III-V compound semiconductor surfaces has been studied by photoemission spectroscopy around N 1s core-level and near-edge x-ray absorption fine structure (NEXAFS) around NK edge. Interstitial molecular nitrogen N2 has been formed in all of the samples under consideration. The presence of N2 produces a sharp resonance in low-resolution NEXAFS spectra, showing the characteristic vibrational fine structure in high-resolution measurements, and at the same time, a new peak, shifted toward higher binding energies for several eV, in all N 1s photoemission spectra.
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