Abstract:First-principles calculations have evolved from mere aids in explaining and supporting experiments to powerful tools for predicting new materials and their properties. In the first part of this review we describe the state-of-the-art computational methodology for calculating the structure and energetics of point defects and impurities in semiconductors. We will pay particular attention to computational aspects which are unique to defects or impurities, such as how to deal with charge states and how to describe and interpret transition levels. In the second part of the review we will illustrate these capabilities with examples for defects and impurities in nitride semiconductors. Point defects have traditionally been considered to play a major role in wide-band-gap semiconductors, and first-principles calculations have been particularly helpful in elucidating the issues. Specifically, calculations have shown that the unintentional n-type conductivity that has often been observed in as-grown GaN cannot be attributed to nitrogen vacancies, but is due to unintentional incorporation of donor impurities. Native point defects may play a role in compensation and in phenomena such as the yellow luminescence, which can be attributed to gallium vacancies. In the section on impurities, specific attention will be focused on dopants. Oxygen, which is commonly present as a contaminant, is a shallow donor in GaN but becomes a deep level in AlGaN due to a DX transition. Magnesium is almost universally used as the p-type dopant, but hole concentrations are still limited. Reasons for this behavior are discussed, and alternative acceptors are examined. Hydrogen plays an important role in p-type GaN, and the mechanisms that underlie its behavior are explained. Incorporating hydrogen along with acceptors is an example of codoping; a critical discussion of codoping is presented. Most of the information available to date for defects and impurities in nitrides has been generated for GaN, but we will also discuss AlN and InN where appropriate. We conclude by summarizing the main points and looking towards the future.

Behavior of Nitrogen Impurities in III–V Semiconductors

First-principles calculations for defects and impurities: Applications to III-nitrides

Dynamics Studies of Nitrogen Interstitial in GaN from Ab Initio Calculations

Silicon and Silicon-Nitrogen Impurities in Graphene: Structure, Energetics, and Effects on Electronic Transport

Investigation of native defects and impurities in X-N (X = Al, Ga, In)

Spatially resolved electronic structure of an isovalent nitrogen center in GaAs

Special role of indium nitride in the properties of related compounds and quantum structures

A first-principles understanding of point defects and impurities in GaN

Electron Transport Within III-V Nitride Semiconductors

Nitrogen vacancy–acceptor complexes in gallium nitride

Phonon Sidebands of Excitons Bound to Isoelectronic Impurities in Semiconductors.

Improvement of III-V dilute nitride thin films for solar cell application: Effect of antimony doping

Characterization of Molecular Nitrogen in III-V Compound Semiconductors by Near-Edge X-Ray Absorption Fine Structure and Photoemission Spectroscopies

A systematic study of spin-dependent recombination in GaAs$_{1-x}$N$_x$ as a function of nitrogen content

Gaussian impurity bands in GaN and weakening of carrier confinement in InGaN/GaN quantum wells

Ab Initio Calculations of Structural and Energetic Properties of Defects in Gallium Nitride

Inter and intra band impurity-related absorption in (In,Ga)N/GaN QW under composition, size and impurity effects

Optical Studies of Carrier Dynamics and Non-Equilibrium Optical Phonons in Nitride-Based Semiconductors

Nitrogen in Czochralski Silicon

Hydrostatic Pressure as a Tool for the Study of Semiconductor Properties-An Example of III-V Nitrides

Electronic band structure of nitrogen diluted Ga(PAsN): Formation of the intermediate band, direct and indirect optical transitions, localization of states