Abstract:In this work, we investigate the silicon nitridation process using a N 2 plasma Glow Discharge Source (GDS) in an ultra-high vacuum chamber. In situ Angle Resolved X-ray Photoelectron Spectroscopy (ARXPS) measurements were performed to determine various chemical environments of the surface species. The main goals of this study are determination of the film chemical composition, to estimate its thickness and identify various phenomena taking place during the nitridation process under different experimental conditions. To achieve these objectives, we developed an ARXPS intensity model for an ultrathin SiN x overlayer. Based on the ARXPS results, which indicate that the silicon nitride film is not homogenous, we adopted a bi-layer model composed of two Si x N y O z layers with varying thickness and chemical composition. The model is built from analysis of photoelectron intensities, considering a comparison between experimental and theoretical data. This bi-layer model revealed that the silicon nitride layer consists of a surface layer composed of approximately equal amounts of silicon and nitrogen (50% each), and an interfacial layer containing varying amounts of oxygen depending on experimental parameters. The presence of oxygen is due to residual air contamination in the vacuum chamber and/or to Si native oxide. The estimated thickness of silicon nitride film is less than 9 nm, depending on the nitridation time and temperature. The model developed in this work enabled us to study the effects of initial surface state (as received or chemically cleaned), Si substrate crystallographic orientation (such as (100) and (111)), and the nitridation temperature (room temperature and 500°C). The diffusing species (N + , N 2 + , O + ), which play a crucial role during nitridation, were found to be influenced by temperature, treatment time, and substrate orientation. The diffusion phenomenon competed with other processes such as NO desorption, leading to a significant impact on formation of the SiN x film. Furthermore, we compared the thickness obtained from the ARXPS model using cross-sectional High-Resolution Transmission Electron Microscopy (HR-TEM) images. Additional Low-Energy Electron Diffraction (LEED) measurements indicated that the SiN x film was amorphous.

Characterization of gate oxynitrides by means of time of flight secondary ion mass spectrometry and x-ray photoelectron spectroscopy. Quantification of nitrogen

FIB’n’SIMS – Advanced Depth Analysis on Hybrid Organic-Inorganic Nanomaterials

Characterisation of molecular nitrogen in ion-bombarded compound semiconductors by synchrotron-based absorption and emission spectroscopies

Characterization of Molecular Nitrogen in III-V Compound Semiconductors by Near-Edge X-Ray Absorption Fine Structure and Photoemission Spectroscopies

Nitrogen investigation by SIMS in two wide band-gap semiconductors: Diamond and Silicon Carbide

Kinetics of Nitrogen Indiffusion in Czochralski Silicon Annealed in Nitrogen Ambient

Unlocking the chemical environment of nitrogen in perovskite-type oxides

Advances in secondary ion mass spectroscopy

Influence of Nitrogen on Tunneling Barrier Heights and Effective Masses of Electrons and Holes at Lightly-Nitrided SiO2∕Si Interface

Quantitative depth profiling of Si1-xGex structures by time-of-flight secondary ion mass spectrometry and secondary neutral mass spectrometry

High Quality of Ultra-Thin SiOxNyFilms Prepared in Nitrous Oxide Ambients Using Thermal Low-Pressure Oxynitridation

Real time observation of oxygen diffusion in CGO thin films using spatially resolved Isotope Exchange Raman Spectroscopy

Nitrogen Depth Profiles in Plasma Implanted Stainless Steel

Angle-Resolved X-ray Photoelectron Spectroscopy intensity modeling of SiN x ultrathin layer grown on Si (100) and Si (111) substrates by N 2 plasma treatment

Electronic Structure of Carbon Nitride Thin Films Studied by X-ray Spectroscopy Techniques

Atomic-scale characterization of nitrogen-doped graphite: Effects of dopant nitrogen on the local electronic structure of the surrounding carbon atoms

Plasma Profiling Time-of-Flight Mass Spectrometry for Fast Elemental Analysis of Semiconductor Structures with Depth Resolution in the Nanometer Range

High Sensitivity of Fluorine Gas-Assisted FIB-TOF-SIMS for Chemical Characterization of Buried Sublayers in Thin Films

Optimization of nitrided gate dielectrics by plasma-assisted and rapid thermal processing

Deconvoluting the XPS spectra for nitrogen-doped chars: An analysis from first principles

Empirical Approach to Quantifying Sensitivity in Different Chemical Ionization Techniques for Organonitrates and Nitroaromatics Constrained by Ion-Molecule Reaction and Transmission Efficiency