Dot Line Pattern Formation in Photoresist Films by Mask-Guided LIPSS Formation Due to Excimer Laser Irradiation

Shengying Lai,Pierre Lorenz,Martin Ehrhardt,Bing Han,Jian Lu,Klaus Zimmer
DOI: https://doi.org/10.2961/jlmn.2019.02.0002
2019-01-01
Abstract:Micro-nano patterns are requested for various applications mimicking structures from nature. Here top-down patterning by phase mask irradiation was combined with bottom-up LIPSS (Laser Induced Periodic Surface Structures) formation processes to achieve hierarchically organized structures. Novolac films (200 to 700 nm film thickness) were irradiated by a high number of excimer laser pulses (N = 1500) at very low fluences (F = 12 +/- 1 mJ/cm(2)) to achieve the LIPSS formation. The area, the organization and the appearance of the LIPSS are related to the confinement of the LIPS S formation area due to the incident laser energy density distribution at the sample. At particular conditions using phase mask irradiation single chain dot like pattern with a size of approximately 220 nm have been achieved. This particular result represents a unique feature of LIPS S formation by surface scattering due to the confinement of the laser-driven interaction processes.
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