Characteristics of ZnS-SiO2 film used as phase-change optical disk dielectric layer

B Liu,H Ruan,FX Gan
DOI: https://doi.org/10.3321/j.issn:1000-324X.2003.01.030
IF: 1.292
2003-01-01
Journal of Inorganic Materials
Abstract:The characteristics of ZnS-SiO2 dielectric film were studied by using AFM, XRD, TEM, UV/Vis/NIR spectrometer, and spectroscopic ellipsometer methods. It was-indicated that the as-deposited ZnS-SiO2 film is amorphous and has Straski-Krastanov type growth characteristic. The surface of the ZnS-SiO2 film is very smooth. The grain size of the ZnS-SiO2 film is very small, around 2similar to10nm. The transmissivity of the ZnS-SiO2 film is large and the extinction coefficient is very small, which are beneficial to reduce the loss of laser power. The refractive index of the ZnS-SiO2 film is large and the recording layer can be protected very well.
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