Abstract:CaMg 2 Bi 2 -based compounds, a kind of the representative compounds of Zintl phases, have uniquely inherent layered structure and hence are considered to be potential thermoelectric materials. Generally, alloying is a traditional and effective way to reduce the lattice thermal conductivity through the mass and strain field fluctuation between host and guest atoms. The cation sites have very few contributions to the band structure around the fermi level; thus, cation substitution may have negligible influence on the electric transport properties. What is more, widespread application of thermoelectric materials not only desires high Z T value but also calls for low-cost and environmentally benign constituent elements. Here, Ba substitution on cation site achieves a sharp reduction in lattice thermal conductivity through enhanced point defects scattering without the obvious sacrifice of high carrier mobility, and thus improves thermoelectric properties. Then, by combining further enhanced phonon scattering caused by isoelectronic substitution of Zn on the Mg site, an extraordinarily low lattice thermal conductivity of 0.51 W m -1 K -1 at 873 K is achieved in (Ca 0.75 Ba 0.25 ) 0.995 Na 0.005 Mg 1.95 Zn 0.05 Bi 1.98 alloy, approaching the amorphous limit. Such maintenance of high mobility and realization of ultralow lattice thermal conductivity synergistically result in broadly improvement of the quality factor β . Finally, a maximum Z T of 1.25 at 873 K and the corresponding Z T a v e up to 0.85 from 300 K to 873 K have been obtained for the same composition, meanwhile possessing temperature independent compatibility factor. To our knowledge, the current Z T a v e exceeds all the reported values in AMg 2 Bi 2 -based compounds so far. Furthermore, the low-cost and environment-friendly characteristic plus excellent thermoelectric performance also make the present Zintl phase CaMg 2 Bi 2 more competitive in practical application.

Ternary Thermoelectric AB2C2 Zintls

Enhancing thermoelectric performance of AB 2 Sb 2 -type Zintl phase through band shaping and lattice distortion

Na/Bi-co-doping and Heterogeneous Interfaces Leading to Enhanced Thermoelectric Performance of P-Type Mg3Sb2-based Zintls

Realizing high thermoelectric performance in p-type CaZn2Sb2-alloyed Mg3Sb2-based materials via band and point defect engineering

Planar Zintl-phase high-temperature thermoelectric materials XCuSb (X = Ca, Sr, Ba) with low lattice thermal conductivity

Regulating thermoelectric properties of Eu0.5Ca0.5Zn2Sb2 through Mg dopant

Electronic Orbital Alignment and Hierarchical Phonon Scattering Enabling High Thermoelectric Performance p-Type Mg 3 Sb 2 Zintl Compounds

Ternary mixed-anion semiconductors with tunable band gaps from machine-learning and crystal structure prediction

First-Principles Thermoelectric Study of SrMgSi and CaMgGe Zintl-Phase Compounds

Enhanced Thermoelectric Performance of LiZnSb-Alloyed CaZn 0.4 Ag 0.2 Sb by Band Engineering

High-Performance Mg<sub>3</sub>Sb<sub>2-<i>x</i></sub>Bi<i><sub>x</sub></i> Thermoelectrics: Progress and Perspective

High-Performance Mg3Sb2-xBix Thermoelectrics: Progress and Perspective

Exceptional thermoelectric performance in AB 2 Sb 2 -type Zintl phases through band shaping

Achieving High Thermoelectric Performance in Rare-Earth Element-Free CaMg 2 Bi 2 with High Carrier Mobility and Ultralow Lattice Thermal Conductivity

Enhanced thermoelectric performance of P-type CaMg2Bi1.98 and optimized CaAl2Si2-type Zintl phase module with equal cross-section area

Improvement of the Thermoelectric Properties of p-Type Mg 3 Sb 2 by Mg-Site Double Substitution

Band convergence and phonon engineering to optimize the thermoelectric performance of CaCd 2 Sb 2

Zintl Phase Yb 1– x Ba x Mg 2 Bi 1.98 Compounds with Enhanced Thermoelectric Performance Caused by Cation Substitution

Mg3(Bi,Sb)2 single crystals towards high thermoelectric performance

Promising Zintl-Phase Thermoelectric Compound SrAgSb

Predicting High Thermoelectric Performance of ABX Ternary Compounds NaMgX (X = P, Sb, As) with Weak Electron–phonon Coupling and Strong Bonding Anharmonicity