Abstract:Mg3 (Sb,Bi)2 alloys have recently been discovered as a competitive alternative to the state-of-the-art n-type Bi2 (Te,Se)3 thermoelectric alloys. Previous theoretical studies predict that single crystals Mg3 (Sb,Bi)2 can exhibit higher thermoelectric performance near room temperature by eliminating grain boundary resistance. However, the intrinsic Mg defect chemistry makes it challenging to grow n-type Mg3 (Sb,Bi)2 single crystals. Here, the first thermoelectric properties of n-type Te-doped Mg3 Sb2 single crystals, synthesized by a combination of Sb-flux method and Mg-vapor annealing, is reported. The electrical conductivity and carrier mobility of single crystals exhibit a metallic behavior with a typical T-1.5 dependence, indicating that phonon scattering dominates the charge carrier transport. The absence of any evidence of ionized impurity scattering in Te-doped Mg3 Sb2 single crystals proves that the thermally activated mobility previously observed in polycrystalline materials is caused by grain boundary resistance. Eliminating this grain boundary resistance in the single crystals results in a large enhancement of the weighted mobility and figure of merit zT by more than 100% near room temperature. This work experimentally demonstrates the accurate understanding of charge-carrier scattering is crucial for developing high-performance thermoelectric materials and indicates that single-crystalline Mg3 (Sb,Bi)2 solid solutions can exhibit higher zT compared to polycrystalline samples.

Improvement of the Thermoelectric Properties of p-Type Mg 3 Sb 2 by Mg-Site Double Substitution

Improvement of the Thermoelectric Properties of P-Type Mg3Sb2 by Mg-Site Double Substitution

Revelation of Inherently High Mobility Enables Mg3Sb2 As a Sustainable Alternative to N‐bi2te3 Thermoelectrics

Realizing high thermoelectric performance in p-type CaZn2Sb2-alloyed Mg3Sb2-based materials via band and point defect engineering

Enhanced thermoelectric performance of p -type Mg 3 Sb 2 by lithium doping and its tunability in an anionic framework

Enhanced Thermoelectric Performance in P-Type Mg 3 Sb 2 Via Lithium Doping

Electronic Orbital Alignment and Hierarchical Phonon Scattering Enabling High Thermoelectric Performance p-Type Mg 3 Sb 2 Zintl Compounds

Electronic Orbital Alignment and Hierarchical Phonon Scattering Enabling High Thermoelectric Performance P-Type Mg3Sb2 Zintl Compounds

Enhancing thermoelectric performance of AB 2 Sb 2 -type Zintl phase through band shaping and lattice distortion

Na/Bi-co-doping and Heterogeneous Interfaces Leading to Enhanced Thermoelectric Performance of P-Type Mg3Sb2-based Zintls

Enhancing Thermoelectric Performance of AB2Sb2-type Zintl Phase Through Band Shaping and Lattice Distortion

Thermoelectric performance improvement of p-type Mg3Sb2-based materials by Zn and Ag co-doping

Enhancing the Thermoelectric Performance of P-Type Mg3Sb2 Via Codoping of Li and Cd

Significantly Enhanced Thermoelectric Performance of p -Type Mg 3 Sb 2 via Zn Substitution on Mg(2) Site: Optimization of Hole Concentration Through Ag Doping

Synergistic effects of Mg vacancy and Ag doping on thermoelectric transport properties of p-type Mg3Sb2

Thermoelectric performance enhancement of Pb-doped α -MgAgSb near room temperature

Significantly enhanced thermoelectric properties of p-type Mg3Sb2 via co-doping of Na and Zn

Metallic N-Type Mg3 Sb2 Single Crystals Demonstrate the Absence of Ionized Impurity Scattering and Enhanced Thermoelectric Performance.

Band Engineering and Phonon Engineering Effectively Improve N-Type Mg3Sb2 Thermoelectric Material Properties.

Rational Composition Engineering Toward High Thermoelectric Performance in P-Type EuMg2Sb2-based Materials

Enhanced Thermoelectric Properties of Zintl Phase YbMg2Bi1.98 Through Bi Site Substitution with Sb