Abstract:An Mg compensating strategy is proposed to realize highвАРperformance nвАРtype Mg3(Bi, Sb)2 thermoelectric alloys by the meltingвАРsintering approach, reaching peak ZTвЙИ1.55 at 723 K, and average ZT вЙИ1.25 within 323вАУ723 K. This strategy can also be used to obtain nвАРtype Mg3(Bi, Sb)2/Fe legs by a oneвАРstep sintering process, displaying low interfacial contact resistivity, and improved thermal stability. NвАРtype Mg3(Bi, Sb)2вАРbased thermoelectric (TE) alloys show great promise for solidвАРstate power generation and refrigeration, owing to their excellent figureвАРofвАРmerit (ZT) and using cheap Mg. However, their rigorous preparation conditions and poor thermal stability limit their largeвАРscale applications. Here, this work¬†develops an Mg compensating strategy to realize nвАРtype Mg3(Bi, Sb)2 by a facile meltingвАРsintering approach. "2D roadmaps" of TE parameters versus sintering temperature and time are plotted to understand the MgвАРvacancyвАРformation and MgвАРdiffusion mechanisms. Under this guidance, high weight mobility of 347 cm2¬†VвИТ1¬†sвИТ1 and power factor of 34 ¬μW¬†cmвИТ1¬†KвИТ2 can be obtained for Mg3.05Bi1.99Te0.01, and a peak ZTвЙИ1.55 at 723 K and average ZTвЙИ1.25 within 323вАУ723 K can be obtained for Mg3.05(Sb0.75Bi0.25)1.99Te0.01. Moreover, this Mg compensating strategy can also improve the interfacial connecting and thermal stability of corresponding Mg3(Bi, Sb)2/Fe TE legs. As a consequence, this work¬†fabricates an 8вАРpair Mg3Sb2вАРGeTeвАРbased powerвАРgeneration device reaching an energy conversion efficiency of вЙИ5.0% at a temperature difference of 439 K, and a oneвАРpair Mg3Sb2вАРBi2Te3вАРbased cooling device reaching вИТ10.7¬†¬∞C at the cold side. This work paves a facile way to obtain Mg3Sb2вАРbased TE devices at low cost and also provides a guide to optimize the offвАРstoichiometric defects in other TE materials.

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