Abstract:This work reports that impact ionization is the main mechanism responsible for p-type gallium nitride (pGaN) gate breakdown in enhancement-mode GaN high-electron-mobility transistors (HEMTs) under forward gate bias ( ) stress. This conclusion is supported by the following original results: 1) no failure was measured under -12 V reverse gate bias, but all devices failed before could even reach 12 V; 2) light emission was detected on the gate lines across the entire device by emission microscopy (EMMI) under , but no emission can be seen under ; and 3) physical failure analysis revealed that gate breakdown initiated at the gate metal/pGaN interface, leading to dielectric breakdown due to hole trapping exceeding the critical field of the dielectric layer. Two Weibull slopes identified at lower stresses can be explained by the two physical processes originated from the impact ionization mechanism. By understanding the fundamental gate breakdown mechanism, a physics-based gate lifetime model is developed from first principles, which provides a good fit to the measured data points. The model projects low failure rate with 25 years of lifetime, if the gate is operated at the recommended operating condition of 5 V. The projected result demonstrates the excellent gate robustness of pGaN HEMTs.

Study on the Optimization of Off-State Breakdown Performance of P-Gan HEMTs

Optimizing Breakdown Voltage and On-State Resistance by Modulating the Barrier Height along 2DEG Channel for Power P-Gan HEMTs

Simulation Design of a High-Breakdown-voltage P-Gan-gate GaN HEMT with a Hybrid AlGaN Buffer Layer for Power Electronics Applications

Normally-off GaN HEMTs with InGaN P-Gate Cap Layer Formed by Polarization Doping

Review on Main Gate Characteristics of P-Type GaN Gate High-Electron-Mobility Transistors

Breakdown Voltage Enhancement and Specific On-Resistance Reduction in Depletion-Mode GaN HEMTs by Co-Modulating Electric Field

p-GaN Gate HEMTs With 10.6 V Maximum Gate Drive Voltages by Mg Doping Engineering

Optimization AlGaN/GaN HEMT with Field Plate Structures

Gate Leakage Suppression and Breakdown Voltage Enhancement in p-GaN HEMTs using Metal/Graphene Gates

Study on the Gate-Terminated Field-Plates for GaN-Based HEMT

Gate and barrier layer design of E-mode GaN HEMT with p-GaN gate structure

An AlGaN-GaN HEMT with p-GaN Extended Gate for Improvements on Current Dispersion and Breakdown Characteristics

Breakdown voltage improvement of enhancement mode AlGaN/GaN HEMT by a novel step-etched GaN buffer structure

An improved design for e-mode AlGaN/GaN HEMT with gate stack β-Ga2O3/p-GaN structure

An Improved Design for E-Mode AlGaN/GaN HEMT with Gate Stack -Ga2o3/p-gan Structure

Study of the Breakdown Failure Mechanisms for Power AlGaN/GaN HEMTs Implemented Using a RF Compatible Process

On the physical operation and optimization of the p-GaN gate in normally-off GaN HEMT devices

Breakdown enhancement and hot electrons mitigation for p-GaN gate HEMTs by electric field modulation

Normally-Off Schottky-Gate P-Gan HEMTs with Enhanced Irradiation Hardness

Breakdown Voltage Enhancement in GaN Channel and AlGaN Channel HEMTs Using Large Gate Metal Height

Main Mechanism Responsible for pGaN Gate Breakdown and Lifetime Projection in GaN HEMTs