Abstract:The seed assisted growth technology has been used to fabricate the high performance multicrystalline silicon (mc-Si) for photovoltaic application nowadays, which can effectively control the dislocation density by forming uniform and small grains. In this work, we have systematically investigated the effect and mechanism of silicon wafer flakes as the seeds for mc-Si growth. Silicon flakes were put on the crucible bottom as nucleation agents by two different settings, i.e., orderly stacking without interspace and intentionally piling up with interspace. It was found that the numerous small and uniform grains with diameter of ~ 0.5mm were homogenously formed in the intentionally piled up wafer flake seed layer since the liquid silicon drops flew down and solidified in the interspaces during the melting of polysilicon feedstocks. These small self-formed grains served as new seeds, which were better than orderly stacked wafer flakes as seeds. Minority carrier lifetime and photoluminescence mappings have shown that the initial dislocation density of grains with smaller sizes based on the piled silicon flake seeds was much lower than those without seeds or stacked silicon flake seeds, and meanwhile the dislocation propagation was suppressed by means of smaller grain sizes due to the denser grain boundaries. As a result, the corresponding average conversion efficiency of Al-BSF processed solar cells from the mc-Si assisted by piled silicon flakes as seeds was absolutely 0.29% higher than those without seeds and 0.17% higher to those assisted by stacked silicon flakes.

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Growth of low-cost and high-quality monocrystalline silicon ingots by using split recycled seeds

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Improving quality of cast monocrystalline Si ingot with seed crystal strips and graphite soft felt

Effects of impurities and defects on the distribution of minority carrier lifetime in multi-crystalline silicon

Preparation of High-performance Multicrystalline Silicon Ingot Based on Innovative Seeding Strategy for Recycled Seeds

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Effects of impurity barrier layer on the red zone at the bottom of cast monocrystalline Si ingot for solar cells

Investigation of Impurities Distribution on the mc-Si Ingot Grown by the Silicon Nitride Coated Carbon Crucible: Numerical Simulation

Evaluation of Large-Scale Recycled Seed for Cast Monocrystalline Silicon: Defect Multiplication Mechanisms and Feasibility

Recycling of silicon scraps by electron beam melting coupled with directional solidification and its mechanism of impurity removal

Si 3 N 4 /fused quartz composite crucible with enhanced thermal conductivity for multicrystalline silicon ingot growth

Higher Quality Mono-Like Cast Silicon with Induced Grain Boundaries

Preservation of Seed Crystals in Feedstock Melting for Cast Quasi-Single Crystalline Silicon Ingots

Higher quality composite silicon ingot with monocrystalline and multicrystalline bricks

Effect of Silicon Nitride Coated Carbon Crucible on Multi-Crystalline Silicon Ingot during Directional Solidification Process: Numerical Simulation

Numerical and experimental investigation on mc-Silicon growth process by varying the Si<sub>3</sub>N<sub>4</sub> coating thickness of crucible

Enhanced separation of bulk silicon from Si-Sn melt via electromagnetic directional solidification

Continuous Melting and Directional Solidification of Silicon Ingot with an Electromagnetic Cold Crucible