Abstract:The growing importance of applications based on machine learning is driving the need to develop dedicated, energy-efficient electronic hardware. Compared with von Neumann architectures, which have separate processing and storage units, brain-inspired in-memory computing uses the same basic device structure for logic operations and data storage<a href="#ref-CR1">1</a>,<a href="#ref-CR2">2</a>,<a href="/articles/s41586-020-2861-0#ref-CR3">3</a>, thus promising to reduce the energy cost of data-centred computing substantially<a href="/articles/s41586-020-2861-0#ref-CR4">4</a>. Although there is ample research focused on exploring new device architectures, the engineering of material platforms suitable for such device designs remains a challenge. Two-dimensional materials<a href="/articles/s41586-020-2861-0#ref-CR5">5</a>,<a href="/articles/s41586-020-2861-0#ref-CR6">6</a> such as semiconducting molybdenum disulphide, MoS2, could be promising candidates for such platforms thanks to their exceptional electrical and mechanical properties<a href="#ref-CR7">7</a>,<a href="#ref-CR8">8</a>,<a href="/articles/s41586-020-2861-0#ref-CR9">9</a>. Here we report our exploration of large-area MoS2 as an active channel material for developing logic-in-memory devices and circuits based on floating-gate field-effect transistors (FGFETs). The conductance of our FGFETs can be precisely and continuously tuned, allowing us to use them as building blocks for reconfigurable logic circuits in which logic operations can be directly performed using the memory elements. After demonstrating a programmable NOR gate, we show that this design can be simply extended to implement more complex programmable logic and a functionally complete set of operations. Our findings highlight the potential of atomically thin semiconductors for the development of next-generation low-power electronics.

An In-memory Highly Reconfigurable Logic Circuit Based on Diode-assisted Enhanced Magnetoresistance Device

Reconfigurable spintronic logic gate utilizing precessional magnetization switching

A Novel Parallel In-Memory Logic Array Based on Programmable Diodes

Easily Cascaded Memristor-CMOS Hybrid Circuit for High-Efficiency Boolean Logic Implementation

Realization of Nonvolatile Multistate Memory and All 16 Boolean Logic Functions in a Single Self-Biased Magnetoimpedance Device

Memristor‐Based Efficient In‐Memory Logic for Cryptologic and Arithmetic Applications

Silicon-Based Current-Controlled Reconfigurable Magnetoresistance Logic Combined with Non-Volatile Memory

Speed Enhancement of Magnetic Logic-Memory Device by Insulator-to-metal Transition

Magnetic Domain-Wall Racetrack Memory-Based Nonvolatile Logic for Low-Power Computing and Fast Run-Time-Reconfiguration.

STT-MRAM Based Low Power Synchronous Non-Volatile Logic with Timing Demultiplexing

Magnetic Logic Based on Diode-Assisted Magnetoresistance

Reprogrammable Logic in Memristive Crossbar for In-Memory Computing

A Novel Computing-in-Memory Platform Based on Hybrid Spintronic/CMOS Memory

Logic-in-memory based on an atomically thin semiconductor

Reconfigurable Logic-in-Memory Computing Based on a Polarity-Controllable Two-Dimensional Transistor.

Multifunctional Nanoionic Devices Enabling Simultaneous Heterosynaptic Plasticity and Efficient In-Memory Boolean Logic

Enabling in-situ logic-in-memory capability using resistive-RAM crossbar memory

Reconfigurable aJ-Level Ferroelectric Transistor-Based Boolean Logic for Logic-in-Memory

Low Power In-Memory Computing Based On Dual-Mode Sot-Mram

Versatile Logic and Nonvolatile Memory Based on a Van Der Waals Heterojunction

In-Memory Logic Operations and Neuromorphic Computing in Non-Volatile Random Access Memory