Abstract:The reversible resistive switching effect at oxide interface shows promising applications in information storage and artificial intelligence. However, the microscopic switching mechanism is still elusive due to the difficulty of direct observation of the electrical and chemical behavior at the buried interface, which becomes a major barrier to design reliable, scalable, and reproducible devices. Here we used a gold-coated AFM tip as a removable electrode to investigate the resistive switching effect in a microscopic Au/Nb:SrTiO3 Schottky junction. We found that unlike the inhomogeneous random resistive switching in the macroscopic Schottky junctions, the high and low resistance states can be reversibly switched in a controllable way on the Nb-doped SrTiO3 surface by the conductive tip. The switching between the high and low resistance states in vacuum is accompanied by the reversible shift of the surface Fermi level. We indicate that the transfer of the interface oxygen ion in a double-well potential is responsible for the resistive switching in both macroscopic and microscopic Schottky junctions. Our findings provide a guide to optimize the key performance parameters of a resistive switching device such as operation voltage, switching speed, on/off ratio, and state retention time by proper electrode selection and fabrication strategy. (C) 2016 Elsevier B.V. All rights reserved.

Backward rectifying and forward Schottky behavior at doped interface

Backward Rectifying And Forward Schottky Behavior At Au/Nb-1.0 Wt %-Doped Srtio3 Interface

Schottky Behavior at Ag/Nb-1.0wt%-doped SrTiO3 Interface

Electrical Characteristics Of Au And Ag Schottky Contacts On Nb-1.0 Wt %-Doped Srtio3

Backward Diode Behavior in Oxygen-Excessive Manganite-Titanate P-N Junction

Investigation of the Resistance Switching in Au/SrTiO3:Nb Heterojunctions

High-quality all-oxide Schottky junctions fabricated on heavily Nb-doped SrTiO3 substrates

Strain-assisted Tunneling Current Through TbMnO3∕Nb-1 Wt %-Doped SrTiO3 P–n Junctions

Fabrication and Transport Properties of ZnO∕Nb-1wt%-doped SrTiO3 Epitaxial Heterojunctions

Abnormal Rectifying Behavior of In/Srtio3/Srtio3 : Nb Capacitor

Controllable Resistive Switching in Au/Nb:Srtio3 Microscopic Schottky Junctions

Metal and Annealing Atmospheres Dependence of Resistive Switching in Metal/Nb-0.7wt%-Srtio3 Interfaces

Effects of Annealing Temperature on the Characteristics of Au/Ti/4H-SiC Schottky Contact

Rectifying Behaviours of Heterojunctions Composed of Manganites with Different Resistive Properties

Effect of Thermal-Annealing on the Magnetoresistance of Manganite-Based Junctions

Forward And Backward Diodelike Rectifying Properties Of The Heterojunctions Composed Of La1-Xsrxcoo3-Delta And 0.7 Wt % Nb-Doped Srtio3

Performance Comparison of Pt/Au and Ni/Au Schottky Contacts on Alxga1-X N/Gan Heterostructures at High Temperatures

Electronic Transport of the Manganite-Based Heterojunction with High Carrier Concentrations

Manipulating metal-to-insulator transition temperature in manganite–titanate junction by reverse electrical bias

Rectifying I-V Characteristic of LiNbO3∕Nb-doped SrTiO3 Heterojunction

Interface Capacitance of La0.8Ca0.2MnO3∕Nb:SrTiO3 Junctions