Schottky Behavior at Ag/Nb-1.0wt%-doped SrTiO3 Interface

Yimin Cui,Jianqiang Qian
DOI: https://doi.org/10.1016/j.physb.2007.05.038
IF: 2.988
2007-01-01
Physica B Condensed Matter
Abstract:In this work, Schottky junctions of Ag/Nb-1.0wt%-doped SrTiO3 (NSTO) have been fabricated by magnetic controlled sputtering technique and annealing process after sputtering. The junction between these two materials exhibits good Schottky rectifying behavior after high-temperature annealing, and the capacitance–voltage characteristics show linear C−2–V relationships in the reverse condition. The barrier heights were determined to be 2.75eV or so by current–voltage and capacitance–voltage methods, respectively. I–V characteristics revealed that high-temperature annealing in oxygen at 700°C alters this thin surface barrier, reduces the leakage current remarkably.
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