Abstract:The reversible resistive switching effect at oxide interface shows promising applications in information storage and artificial intelligence. However, the microscopic switching mechanism is still elusive due to the difficulty of direct observation of the electrical and chemical behavior at the buried interface, which becomes a major barrier to design reliable, scalable, and reproducible devices. Here we used a gold-coated AFM tip as a removable electrode to investigate the resistive switching effect in a microscopic Au/Nb:SrTiO3 Schottky junction. We found that unlike the inhomogeneous random resistive switching in the macroscopic Schottky junctions, the high and low resistance states can be reversibly switched in a controllable way on the Nb-doped SrTiO3 surface by the conductive tip. The switching between the high and low resistance states in vacuum is accompanied by the reversible shift of the surface Fermi level. We indicate that the transfer of the interface oxygen ion in a double-well potential is responsible for the resistive switching in both macroscopic and microscopic Schottky junctions. Our findings provide a guide to optimize the key performance parameters of a resistive switching device such as operation voltage, switching speed, on/off ratio, and state retention time by proper electrode selection and fabrication strategy. (C) 2016 Elsevier B.V. All rights reserved.

Backward Rectifying And Forward Schottky Behavior At Au/Nb-1.0 Wt %-Doped Srtio3 Interface

Backward rectifying and forward Schottky behavior at doped interface

Schottky Behavior at Ag/Nb-1.0wt%-doped SrTiO3 Interface

Electrical Characteristics Of Au And Ag Schottky Contacts On Nb-1.0 Wt %-Doped Srtio3

Investigation of the Resistance Switching in Au/SrTiO3:Nb Heterojunctions

Controllable Resistive Switching in Au/Nb:Srtio3 Microscopic Schottky Junctions

Backward Diode Behavior in Oxygen-Excessive Manganite-Titanate P-N Junction

Forward And Backward Diodelike Rectifying Properties Of The Heterojunctions Composed Of La1-Xsrxcoo3-Delta And 0.7 Wt % Nb-Doped Srtio3

Metal and Annealing Atmospheres Dependence of Resistive Switching in Metal/Nb-0.7wt%-Srtio3 Interfaces

Abnormal Rectifying Behavior of In/Srtio3/Srtio3 : Nb Capacitor

High-quality all-oxide Schottky junctions fabricated on heavily Nb-doped SrTiO3 substrates

Electronic Transport and Magnetoresistance of A Heterojunction Composed of La0.7ce0.3mno3 and 1 Wt% Nb-Doped Srtio3

Effects of Lattice Strains on the Interfacial Potential in La0.67ca0.33mno3/Srtio3 : Nb Heterojunctions

Strain-assisted Tunneling Current Through TbMnO3∕Nb-1 Wt %-Doped SrTiO3 P–n Junctions

Fabrication and Transport Properties of ZnO∕Nb-1wt%-doped SrTiO3 Epitaxial Heterojunctions

Rectifying Behaviours of Heterojunctions Composed of Manganites with Different Resistive Properties

Thickness-Dependent Rectifying Behavior in Heterojunctions of Tbmno3/Nb-1.0 Wt.%-Doped Srtio3

Comprehensive Study Of The Resistance Switching In Srtio3 And Nb-Doped Srtio3

Electronic Transport of the Manganite-Based Heterojunction with High Carrier Concentrations

Unidirectional Threshold Resistive Switching in Au/NiO/Nb:SrTiO3 Devices

Performance Comparison of Pt/Au and Ni/Au Schottky Contacts on Alxga1-X N/Gan Heterostructures at High Temperatures