Rectifying Effect Through the Interface of SrTiO3−δ/GaAs Heterojunctions

Z. Y. Zhai,Q. Y. Xie,G. B. Chen,A. L. Yu,F. M. Zhang,X. S. Wu
DOI: https://doi.org/10.1088/0268-1242/29/11/115023
IF: 2.048
2014-01-01
Semiconductor Science and Technology
Abstract:Oxides-semiconductor junctions have attracted great attention and exhibited promising potential in integrated devices in which the passing current is controlled by applying voltage. It is found that an oxygen-deficient SrTiO3-delta/p-GaAs junction displays an obvious rectifying effect. The SrTiO3-delta thin film is in the anomalous in-plain compressive strain, as confirmed by structural characterization. Investigations on the current-voltage curve show that the current decreases with the increasing temperature at the reverse bias, which suggests that the rectifying behavior may be attributed to the strain-assisted tunneling mechanism. The effect of strain or film thickness on the transport property is also discussed.
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