Abstract:physica status solidi (a)Volume 122, Issue 2 p. K151-K155 Short Note Crystal Structure and Superconductivity of Y1−xPrxBa2Cu3O7−δ Compounds X. A. Cheng, X. A. Cheng Department of Physics, University of Science and Technology of China, Hefei Search for more papers by this authorZ. H. He, Z. H. He Department of Physics, University of Science and Technology of China, Hefei Search for more papers by this authorH. Zhang, H. Zhang Department of Physics, Beijing University Search for more papers by this authorX. Y. Zhou, X. Y. Zhou International Center for Materials Science, Academia Sinica, Shenyang Search for more papers by this authorS. X. Wang, S. X. Wang Department of Physics, University of Science and Technology of China, Hefei Search for more papers by this authorM. H. Fang, M. H. Fang Department of Physics, Zhejiang University Search for more papers by this authorJ. S. Xia, J. S. Xia Department of Physics, University of Science and Technology of China, Hefei Search for more papers by this authorJ. Sha, J. Sha Department of Physics, University of Science and Technology of China, Hefei Search for more papers by this authorZ. P. Su, Z. P. Su Department of Physics, University of Science and Technology of China, Hefei Search for more papers by this authorQ. R. Zhang, Q. R. Zhang Department of Physics, Zhejiang University Search for more papers by this author X. A. Cheng, X. A. Cheng Department of Physics, University of Science and Technology of China, Hefei Search for more papers by this authorZ. H. He, Z. H. He Department of Physics, University of Science and Technology of China, Hefei Search for more papers by this authorH. Zhang, H. Zhang Department of Physics, Beijing University Search for more papers by this authorX. Y. Zhou, X. Y. Zhou International Center for Materials Science, Academia Sinica, Shenyang Search for more papers by this authorS. X. Wang, S. X. Wang Department of Physics, University of Science and Technology of China, Hefei Search for more papers by this authorM. H. Fang, M. H. Fang Department of Physics, Zhejiang University Search for more papers by this authorJ. S. Xia, J. S. Xia Department of Physics, University of Science and Technology of China, Hefei Search for more papers by this authorJ. Sha, J. Sha Department of Physics, University of Science and Technology of China, Hefei Search for more papers by this authorZ. P. Su, Z. P. Su Department of Physics, University of Science and Technology of China, Hefei Search for more papers by this authorQ. R. Zhang, Q. R. Zhang Department of Physics, Zhejiang University Search for more papers by this author First published: 16 December 1990 https://doi.org/10.1002/pssa.2211220254Citations: 3 Hefei, Anhui 230026, People's Republic of China. Beijing 100871, People's Republic of China. Shenyang 110015, People's Republic of China. Hangzhou, Zhejiang 310027, People's Republic of China. AboutPDF ToolsRequest permissionExport citationAdd to favoritesTrack citation ShareShare Give accessShare full text accessShare full-text accessPlease review our Terms and Conditions of Use and check box below to share full-text version of article.I have read and accept the Wiley Online Library Terms and Conditions of UseShareable LinkUse the link below to share a full-text version of this article with your friends and colleagues. Learn more.Copy URL Share a linkShare onEmailFacebookTwitterLinkedInRedditWechat References 1 R. M. Hazen, L. W. Finger, R. H. Angel, C. T. Drewitt, N. L. Ross, H. K. Mao, and C. G. Madidiacos, Phys. Rev. B 35, 7238 (1989). 2 J. J. Neumeier, T. Bjornholm, M. B. Maple, and I. K. Schuller, Phys. Rev. Letters 63, 2516 (1989). 3 A. P. Goncalves, I. C. Santos, E. B. Lopes, R. T. Henriques, M. Almeida, and M. O. Figueiredo, Phys. Rev. B 37, 7476 (1988). 4 I. D. Parker and R. H. Friend, J. Phys. C 21, L345 (1988). 5 J. Clayhold, N. P. Ong, and Z. Z. Wang, Phys. Rev. B 39, 7324 (1989). 6 A. Kebede, C. S. Jee, J. Schwegler, J. E. Crow, T. Mihalisin, G. H. Myer, R. E. Salomon, and P. Schlottmann, Phys. Rev. B 40, 4453 (1989). 7 C. S. Jee, A. Kebede, D. Nichols, J. E. Crow, T. Mihalismin, G. H. Myer, I. Perez, R. E. Salomon, and P. Schlottmann, Solid State Commun. 69, 379 (1989). 8 Zhenhui He, Han Zhang, Jiansheng Xia, S. X. Wang, M. H. Fang, Z. Y. Chen, Y. T. Qian, and Q. R. Zhang, Physica 165C, 166 (1990). 9 Jianhua Xu, Progr. Phys. No. 8, 1 (1988). Citing Literature Volume122, Issue216 December 1990Pages K151-K155 ReferencesRelatedInformation

Best students

Crystal-Structure and Superconductivity of Y1-Xprxba2cu3o7-Y Compounds

The Role of Si and Sb in the Si-Sb-Te Phase-change Material

Phase Transition Characteristics of Al-Sb Phase Change Materials for Phase Change Memory Application

Improved Thermal Stability and Electrical Properties for Al-Sb-Te Based Phase-Change Memory

Ultra-Stable, Endurable, and Flexible Sb 2 Te x Se 3- x Phase Change Devices for Memory Application and Wearable Electronics

Ab initio molecular dynamics and materials design for embedded phase-change memory

A Complicated Route from Disorder to Order in Antimony–Tellurium Binary Phase Change Materials

Change in Structure of Amorphous Sb–Te Phase‐Change Materials as a Function of Stoichiometry

High Thermoelectric and Reversible P-N-p Conduction Type Switching Integrated in Dimetal Chalcogenide.

Research on Improved Crystallization Properties and Underlying Mechanism of the Sb 2 Te 3 Phase-Change Thin Film by Inserting Sn 15 Sb 85 Layers

Screening (SbTe)1−xNMx Solid Solutions Towards to Phase-Change Memory Materials Applications: A High-Throughput Computational Study

Sb-Rich Si-Sb-Te Phase Change Material for Multilevel Data Storage: the Degree of Disorder in the Crystalline State

Advantages of Sisb Phase-Change Material and Its Applications in Phase-Change Memory

The characteristics of GeTe-Sb thin films with different Sb concentration for phase change memory

Study on Interface Adhesion Between Phase Change Material Film and SiO2 Layer by Nanoscratch Test

Nano-crystalline phase change memory with composite Si-Sb-Te film for better data retention and lower operation current

A Study on Inorganic Phase-Change Resist Ge2Sb2(1-x)Bi2xTe5 and Its Mechanism.

Sb-rich Zn–Sb–Te Phase-Change Materials: A Candidate for the Trade-off Between Crystallization Speed and Data Retention

High-throughput computational screening of Sb–Te binary alloys for phase-change storage applications

Topologically Nontrivial Phase-Change Compound GeSb2Te4