Abstract:A complete separation flow for different types of traps, including the separation of energy levels (ETs) and the separation of charging kinetics, making different traps can be modeled and characterized separately by simple experiments. Industrial-grade 7 nm pFinFETs under negative bias temperature instability (NBTI) stress condition is chosen for the demonstration. Four types of traps are identified, including oxide trap Type-A located in the interfacial layer (IL) layer, oxide trap Type-B (B1 and B2) located in the HK layer, and interface trap Type-C located at Si/IL interface. Type-A trap belongs to a preexisting trap which can be well described by the two-state non-radiative multiphonon (NMP) theory and may originate from Vo in SiO2. Types-B1 and Type-B2 traps originate from Ni and Hi respectively, and can be described by incorporating the activation state into the two-state NMP theory. Type-C is located at Si/IL interface and follows the classical power law relationship with the time exponent of 0.17, which may be caused by the breakage of the Si-H bonds due to the reaction with atomic H from either the substrate or the gate. By modeling each type of trap respectively, a unified aging prediction framework was proposed and its long-term predictive capability was experimentally verified under various working conditions. The contribution of each trap to degradation is also discussed, which is helpful to the Design-Technology co-optimization (DTCO) in advanced nodes.

Understanding Frequency Dependence of Trap Generation under AC Negative Bias Temperature Instability Stress in Si P-Finfets

Recovery Behavior of Interface Traps After Negative Bias Temperature Instability Stress in p-FinFETs Featuring Fast Trap Characterization Technique

Impact of Interface Traps Generation on Flicker Noise Degradation in SI Pmosfets

Impact of Electron Trapping on Energy Distribution Characterization of NBTI-Related Defects for Si P-Finfets

Evaluation of MOS Interface Trap Generation after BTI Stress Using Flicker Noise

Comparative Study on the Energy Distribution of Defects under HCD and NBTI in Short Channel P-Finfets.

Drain Bias Effect on the Interface Traps of Pmosfets under Negative Bias Temperature Stress

Comparative Study on the Energy Profile of NBTI-Related Defects in Si and Ferroelectric p-FinFETs

Pulse Stress Frequency Dependence Of Negative Bias Temperature Instability In Sion Gate Transistors

Investigation of Positive Bias Temperature Instability in Advanced FinFET Nodes

On-The-Fly Interface Trap Measurement And Its Impact On The Understanding Of Nbti Mechanism For P-Mosfets With Sion Gate Dielectric

Negative Bias Temperature Instability of HfN/HfO2 Gated P-Mosfets

On the Understanding of pMOS NBTI Degradation in Advance Nodes: Characterization, Modeling, and Exploration on the Physical Origin of Defects

A Fast DCIV Technique for Characterizing the Generation and Repassivation of Interface Traps under DC/ AC NBTI Stress/Recovery Condition in Si P-Finfets

Characteristics and Fluctuation of Negative Bias Temperature Instability in Si Nanowire Field-Effect Transistors

Alleviation of Negative-Bias Temperature Instability in Si P-Finfets with ALD W Gate-Filling Metal by Annealing Process Optimization

Characteristics of Gate Current Random Telegraph Signal Noise in SiON/HfO2/TaN P-Type Metal–Oxide–Semiconductor Field-Effect Transistors under Negative Bias Temperature Instability Stress Condition

Mechanisms of negative bias instability of commercial SiC MOSFET observed by current transients

Investigations of Nbti by Conventional and New Measurement Methods for P-Mosfets

Systematic Study on Predicting the Lifetime of Si pMOSFETs During NBTI Stress Based on Low-Frequency Noise.