Abstract:The growing trend of the Internet of Things (IoT) involves trillions of sensors in various applications. An extensive array of parameters need to be gathered concurrently with high-precision, low-cost, and low-power sensor nodes, such as resistive (R) and capacitive (C) sensors. Single-chip channel fusion can be an effective solution, while it is challenging to suppress the noise and integrate massive I/O pads. However, conventional oversampling noise-shaping methods increase power consumption, which fails to meet the demand of long-term monitoring applications. In addition, existing R/C sensor-interface chips require a pair of I/O pads for each sensor, where the pad frame dominates the overall chip area in massive-channel integration. In this work, we demonstrate a 72-channel R&C sensor-interface chip for proximity-and-temperature sensing. A noise-orthogonalizing technique is proposed to eliminate the quantization noise at the signal frequencies, achieving an energy efficiency of 19.1 pJ/step/channel. Moreover, a pad-sharing technique is proposed to reduce the number of I/O pads by half, enabling 72 sensors to be read by 36 pairs of I/O pads. The chip is fabricated by 65-nm CMOS technology, and measurement results show resolutions of 286 and 162 fF, respectively. The power consumption and die area are reduced to 0.74 /Channel and 0.038 mm2/Channel, respectively.

A Combined Temperature and Capacitance Sensor Interface

An All-Digital CMOS Temperature Sensor with a Wide Supply Voltage Range.

An Energy-Efficient Capacitively Biased Diode-Based Temperature Sensor in 55-nm CMOS

A CMOS Temperature Sensor with Versatile Readout Scheme and High Accuracy for Multi-Sensor Systems

A 0.8V Capacitively-Biased BJT-Based Temperature Sensor with an Inaccuracy of ±0.4°C ($\mathbf{3}\mathbf{\sigma}$) from −40°C to 125°C in 22nm CMOS

Capacitor-Reused Cmos Temperature Sensor With Duty-Cycle-Modulated Output And 0.38 Degrees C (3 Sigma) Inaccuracy

Capacitor‐reused CMOS Temperature Sensor with Duty‐cycle‐modulated Output and 0.38°C () Inaccuracy

Capacitor-reused CMOS temperature sensor with duty-cycle-modulated output and 0.38°C ( 3 σ ) inaccuracy

A 1-V Diode-Based Temperature Sensor with a Resolution FoM of 3.1pj•k2 in 55nm CMOS

An Untrimmed BJT-Based Temperature Sensor with Dynamic Current-Gain Compensation in 55-Nm CMOS Process

Energy-Efficient Capacitive Sensor Interfaces

A Compact Sensor Readout Circuit with Combined Temperature, Capacitance and Voltage Sensing Functionality

A 1770- $\mu$ M 2 Leakage-Based Digital Temperature Sensor with Supply Sensitivity Suppression in 55-Nm CMOS

A Wide Dynamic Range And Fast Update Rate Integrated Interface For Capacitive Sensors Array

A 72-Channel Resistive-and-Capacitive Sensor-Interface Chip With Noise-Orthogonalizing and Pad-Sharing Techniques

An Energy-Efficient BJT-Based Temperature Sensor with +/- 0.8 degrees C (3 sigma) Inaccuracy from-50 to 150 degrees C

A Digital-Analog Hybrid System-on-Chip for Capacitive Sensor Measurement and Control.

A Wide Measurement Range and Fast Update Rate Integrated Interface for Capacitive Sensors Array

An energy-efficient 15-bit capacitive sensor interface.

Vertically Integrated Cmos-Mems Capacitive Humidity Sensor And A Resistive Temperature Detector For Environment Application

A Novel Dual-Functional MEMS Sensor Integrating Both Pressure and Temperature Units