Abstract:As a pillar material of semiconductors, single-crystal silicon (Si) has attracted much attention due to its excellent electronic properties. Meanwhile, femtosecond laser processing as a convenient fabrication method for miniaturized structures provides an effective way to improve the performance of Si-based devices. However, the final-state analysis of femtosecond laser-induced Si micro-nano structures remains to be explored. In this study, the evolution of the micro-nano structures and the variation of surface and subsurface damage with pulse number were studied. Based on the atomic structure, the amorphous layer, dislocation layer, and unaffected layer were found. The amorphous layer resulted from the re-solidification of melted materials. The dislocation layer consisted of dislocations and lattice distortion. The unaffected layer retained the initial lattice structure and was not affected by laser irradiation. The high temperature and stress induced by multiple pulses led to the stacking faults and nano-twins in the subsurface layer. The evolution of the Si structure was essentially a transition process from a dislocation layer to a high-density defect layer and a transition process from nanotips to laser-induced periodic surface structures. During this process, dislocations dominated the femtosecond laser-induced microstructural deformation, affecting the nano-hardness of the irradiated surface. As a result, the nano-hardness of Si structures fabricated using femtosecond laser processing was maximally enhanced by 9.54%. This work provides new information about ultrafast laser-induced surface and subsurface damage, which is significant for the efficient and high-precision fabrication of Si-based functional micro-nano devices.

Irradiation Effect on Ag-Dispersed Amorphous Silicon Thin Films by Femtosecond Laser

Effect of high-power nanosecond and femtosecond laser pulses on silicon nanostructures

Combined Continuum-Atomistic Modeling of Ultrashort-Pulsed Laser Irradiation of Silicon

Atomic-Level Modeling of A Silicon Nanofilm Irradiated by Ultrashort-Pulsed Laser Bursts

Effect of Crystallographic Orientation on Structural Response of Silicon to Femtosecond Laser Irradiation

Molecular Dynamics Simulations of Pulsed Laser Crystallization of Amorphous Silicon Ultrathin Films

Novel Sandwich Structure for Aluminum Induced Crystallization of Amorphous Silicon Thin Films at Low Temperature

Excimer laser recrystallization of amorphous Si films characterized by grazing X-ray diffraction and optical reflectivity

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The Effect Of Laser Crystallization On The Carrier Transport And Electroluminescence From Nanocrystalline Si/Sio2 Multilayers

Depth Profile Study on Raman Spectra of High-Energy-electron-irradiated Hydrogenated Amorphous Silicon Films

Strong Mid-Infrared Absorption and High Crystallinity of Microstructured Silicon Formed by Femtosecond Laser Irradiation in NF3 Atmosphere

Effect of photons on atoms in crystallization of amorphous silicon films

Comparison of structure and properties of femtosecond and nanosecond laser-structured silicon

Pulsed Laser Heating-induced Surface Rapid Cooling and Amorphization

Direct observation and quantification of nanosecond laser induced amorphization inside silicon

Dynamical Process of Krf Pulsed Excimer Laser Crystallization of Ultrathin Amorphous Silicon Films to Form Si Nano-Dots

Light intensity distribution in laser interference crystallization by using a phase-shift grating and Talbot Effect

One-Step femtosecond laser irradiation of Single-Crystal Silicon: Evolution of Micro-Nano structures and damage investigation

Fractal growth of amorphous silicon crystallization induced by aluminum

Crystallinity in periodic nanostructure surface on Si substrates induced by near- and mid-infrared femtosecond laser irradiation