Reversible Transition of Filamentary and Ferroelectric Resistive Switching in BaTiO3/SmNiO3 Heterostructures

Yan-Dong Liu,Chuan-Zhu Hu,Jin-Jin Wang,Ni Zhong,Ping-Hua Xiang,Chun-Gang Duan

DOI: https://doi.org/10.1039/d0tc00676a

IF: 6.4

2020-01-01

Journal of Materials Chemistry C

Abstract:We report a reversible transition between filamentary and ferroelectric resistive switching in BaTiO3/SmNiO3 heterostructures.

What problem does this paper attempt to address?

Asymmetric Reversible Diode-Like Resistive Switching Behaviors in Ferroelectric BaTiO 3 Thin Films

Zhang Fei,Lin Yuan-Bin,Wu Hao,Miao Qing,Gong Ji-Jun,Chen Ji-Pei,Wu Su-Juan,Zeng Min,Gao Xing-Sen,Liu Jun-Ming

DOI: https://doi.org/10.1088/1674-1056/23/2/027702

2014-01-01

Chinese Physics B

Abstract:In this work, the resistive switching behaviors of ferroelectrictric BaTiO3/La0.67Sr0.33MnO3 heterostructures deposited by pulsed laser deposition are investigated. The BaTiO3 films show both well-established P—E hysteresis loops, and asymmetric reversible diode-like resistive switching behaviors, involving no forming process. It is found that both the ON/OFF ratio and the stability of resistive switching are substantially dependent on operation voltage (Vmax). At a Vmax of 15 V, a large ON/OFF resistance ratio above 1000 is obtained at a Vmax of 15 V, which is able to maintain stability up to 70-switching cycles. The above resistive switching behaviors can be understood by modulating interface Schottky barriers as demonstrated by I—V curve fitting.
Resistive Switching in BiFeO_3 -Based Heterostructures Due to Ferroelectric Modulation on Interface Schottky Barriers

Dongxia Chen,Aidong Li,Di Wu

DOI: https://doi.org/10.1007/s10854-014-2010-3

2014-01-01

Journal of Materials Science Materials in Electronics

Abstract:Ferroelectric BiFeO3 (BFO) thin films were deposited on (001) SrTiO3 substrates buffered with La0:7Sr0:3MnO3 (LSMO) electrodes. Bipolar resistive switching in Pt/BFO/LSMO heterostructures were observed with high stability and long retention. However, transport characteristics of Pt/BFO/LSMO is highly asymmetric and pronounced resistive switching can only be observed by applying negative reading pulses on the Pt top electrodes, i.e. when the Pt/BFO Schottky barrier is reverse-biased. This resistive switching is discussed in terms of a modulation on the Pt/BFO interface Schottky barrier by the polarization switching in ferroelectric BFO. Comparative studies on Pt/BFO/SrRuO3 and Pt/BFO/ LaNiO3 heterostructures reveal that the work function of the electrode materials and the formation of Schottky barriers are significant to the observed resistive switching behaviors.
Atomic-Scale Insight into the Reversibility of Polar Order in Ultrathin Epitaxial Nb:SrTiO 3/batio 3 Heterostructure and Its Implication to Resistive Switching

Junxiang Yao,Mao Ye,Yuanwei Sun,Ye Yuan,Hua Fan,Yuan Zhang,Chao Chen,Cong Liu,Ke Qu,Gaokuo Zhong,Tingting Jia,Zhen Fan,Shanming Ke,Yue Zhao,Chungang Duan,Peng Gao,Jiangyu Li

DOI: https://doi.org/10.1016/j.actamat.2020.02.001

IF: 9.4

2020-01-01

Acta Materialia

Abstract:Ferroelectric heterostructures with bi-stable state of polarization are appealing for data storage as well as tunable functionalities such as memristor behavior. While an increasing number of experimental and theoretical studies suggest that polarization persists in ultrathin epitaxial heterostructures approaching just a couple of unit cells, the switching of such polar order is much less well understood, and whether polarization can be reversed in ultrathin ferroelectric heterostructures remains to be answered. Here we fabricate high-quality 7-unit cell thick BaTiO3 (BTO) films on Nb-doped single crystalline SrTiO3 (NSTO) substrate, and demonstrate their apparent yet unambiguously false polarization reversal due to charge injection using comprehensive piezoresponse force microscopy (PFM) studies. The presence of weak polar order consistent with linear piezoelectricity is confirmed at the atomic scale by high resolution integrated differential phase contrast (IDPC) of transmission electron microscopy (TEM) as well as macroscopic second harmonic generation (SHG), while the lack of polarization reversal under the voltage applied is supported by density functional theory calculation showing the persistence of dead layer on the surface. Nevertheless, poling-induced electric conduction differing by two orders of magnitude is observed, demonstrating resistive switching in ferroelectric heterostructure in the absence of polarization reversal, even with weak polar order. Our finding has technological implications on emerging memristor applications with potentially more accessible states than bi-stable polarization modulated mechanism, and raises technical challenges to unambiguously demonstrate polarization switching in ultrathin films at their critical size limit.
Magnetization Switching In The Bife0.9mn0.1o3 Thin Films Modulated By Resistive Switching Process

Guang-Yi Chen,Gui-Feng Bi,Lin Song,Yakui Weng,Dan-Feng Pan,Yongchao Li,Shuai Dong,Tao Tang,Jun-Ming Liu,Jianguo Wan

DOI: https://doi.org/10.1063/1.4962906

IF: 4

2016-01-01

Applied Physics Letters

Abstract:Polycrystalline BiFe0.9Mn0.1O3 thin films have been prepared on Pt/Ti/SiO2/Si wafers by a sol-gel process. The film exhibits typical resistive switching (RS) effect. Moreover, accompanied with the RS process, remarkable magnetization switching (MS) behaviors happen, i.e., at low resistance state the film shows high saturation magnetization, while showing low saturation magnetization at high resistance state. We revealed that such a MS effect mainly originates from the conversion of Fe ion valence state between Fe2+ and Fe3+ during the RS process, which was confirmed by the x-ray photoelectron spectroscopy measurements. The further first-principle calculations showed that the doping of Mn into the BiFeO3 could induce an impurity energy level which makes it facile to achieve the conversion of Fe ion valence state. Based on the conductive filament model, a possible mechanism of tuning the MS effect by RS process is proposed, which is closely related to the conversion of Fe ion valence state along with the forming and rupture of conduction filaments. This work provides us a promising avenue to design switchable multistate devices with both electric and magnetic functionalities. Published by AIP Publishing.
Three-State Resistive Switching in Cofe2o4/Pb(Zr0.52ti0.48)O-3/Zno Heterostructure

Ziwei Li,Mingxiu Zhou,Wangfeng Ding,Hang Zhou,Bo Chen,Jian-Guo Wan,Jun-Ming Liu,Guanghou Wang

DOI: https://doi.org/10.1063/1.4730965

IF: 4

2012-01-01

Applied Physics Letters

Abstract:The heterostructural film combining multiferroic CoFe2O4/Pb(Zr0.52Ti0.48)O3 bilayer with semiconductor ZnO layer was prepared. Three-state resistive switching was demonstrated by time-dependent current measurements under different stimuli combination of voltage pulse and magnetic bias. The asymmetry diodelike current-voltage, capacitance-voltage, and polarization-voltage loops, which seriously depend on magnetic bias, were observed. We revealed that three-state resistive switching was dominated by the changes in the charge carriers in the heterostructure, which were modulated by the magnetoelectric coupling between ferromagnetic and ferroelectric layers and interface polarization coupling between ferroelectric and semiconductor layers. This work provides promising candidates for developing advanced switchable devices with multifunctional memory.
Bipolar Resistive Switching in BiFe 0.95 Zn 0.05 O 3 Films

Qingyu Xu,Xueyong Yuan,Yanqiang Cao,Lifang Si,Di Wu

DOI: https://doi.org/10.1088/1674-1056/22/10/107702

2013-01-01

Chinese Physics B

Abstract:Bipolar resistive switching is studied in BiFe0.95Zn0.05O3films prepared by pulsed laser deposition on（001） SrTiO3substrate,with LaNiO3as the bottom electrode,and Pt as the top electrode.Multiple steps of resistance change are observed in the resistive switching process with a slow voltage sweep,indicating the formation/rupture of multiple conductive filaments.A resistive ratio of the high resistance state（HRS） to the low resistance state（LRS） of over three orders of magnitude is observed.Furthermore,the conduction mechanism is confirmed to be space-charge-limited conduction with the Schottky emission at the interface with the top Pt electrodes in the HRS,and Ohmic in the LRS.Impedance spectroscopy demonstrates a conductive ferroelectric/interfacial dielectric 2-layer structure,and the formation/rupture of the conductive filaments mainly occurs at the interfacial dielectric layer close to the top Pt electrodes.
Mechanism of Ferroelectric Resistive Switching in Bi0.9la0.1feo3 Thin Films

R. L. Gao,C. L. Fu,W. Cai,G. Chen,X. L. Deng,H. W. Yang,J. R. Sun,Y. G. Zhao,B. G. Shen

DOI: https://doi.org/10.1016/j.tsf.2015.03.038

IF: 2.1

2015-01-01

Thin Solid Films

Abstract:Resistive switching devices are considered as one of the most promising candidates for the next generation memories and nonvolatile logic applications. In this paper, we report an anomalous resistive switching effect in BiFeO3 based hetero-structures. Different from conventional resistive switching devices made of metal oxides, no forming process is needed to obtain a stable resistive switching effect in the ferroelectric resistive switching devices. Both positive and negative current peaks are observed under forward bias and reverse bias, respectively, suggesting that flexible Schottky-like barriers and conductive channels form at the top and bottom interfaces, which play important roles in the resistive switching of Ag/Bi0.9La0.1FeO3/La0.3Sr0.7MnO3 sandwiched structures. These flexible Schottky-like barriers may come from the migration of charged oxygen vacancies/ions under the electric field of sweeping bias and the redistribution of carriers with ferroelectric switching, while the conductive channel resulted from charged oxygen vacancies/ions. These results demonstrate promising prospects for application of the ferroelectric resistive switching effect at interfaces to nonvolatile memory.
Controlling Resistance Switching Polarities of Epitaxial BaTiO3 Films by Mediation of Ferroelectricity and Oxygen Vacancies

Ming Li,Jian Zhou,Xiaosai Jing,Min Zeng,Sujuan Wu,Jinwei Gao,Zhang,Xingsen Gao,Xubing Lu,J. -M. Liu,Marin Alexe

DOI: https://doi.org/10.1002/aelm.201500069

IF: 6.2

2015-01-01

Advanced Electronic Materials

Abstract:In this work, the observations of different resistive switching polarities of epitaxial BaTiO3 (BTO) thin films fabricated by pulsed laser deposition are reported. The BTO films with various ferroelectric states and oxygen vacancy (VO) concentrations are achieved by carefully controlling the oxygen pressure during the depositions. For films with no ferroelectricity and high VO concentrations, the resistance will change from a low resistance state (LRS) to a high resistance state (HRS) during a positive voltage cycle (0 → 3 → 0 V), and from a HRS to a LRS during a negative voltage cycle (0 → −3 → 0 V). However, completely opposite RS polarity is observed for the films with weak ferroelectricity and intermediate VO concentrations. Such RS behaviors and polarity can be hardly observed or negligible for the films with good ferroelectricity and nearly free of VO. It is proposed that the unique resistance switching polarities of BTO films are attributed to the competition between the ferroelectricity and oxygen vacancy migration dynamics. Results clarify the complex RS mechanisms in the BTO films, and address the competing ferroelectricity and VO migration in modulating the RS behaviors of ferroelectric oxide‐based resistive memory devices.
Tunable Resistive Switching Behaviour in Ferroelectric–zno Bilayer Films

Ming-Xiu Zhou,Zi-Wei Li,Bo Chen,Jian-Guo Wan,Jun-Ming Liu

DOI: https://doi.org/10.1088/0022-3727/46/16/165304

2013-01-01

Journal of Physics D Applied Physics

Abstract:Pb(Zr0.52Ti0.48)O3/ZnO bilayer films with various ZnO-layer thicknesses were prepared by a sol–gel process, and their phase structures, electric conduction and polarization behaviour were measured. The results showed that the preferential crystal orientation of the ZnO layer changed with a change in its thickness. The strong dependence of both asymmetric current–voltage and polarization–voltage characteristics on the ZnO-layer thickness was observed. The resistance ratio of the high-resistance state (HRS) to the low-resistance state (LRS) increased with increasing ZnO-layer thickness, and a high rectification ratio was obtained in the bilayer film with an optimized ZnO-layer thickness. The combined effects of interface polarization coupling and energy band structure on the resistive switching behaviour of the bilayer films were revealed, and the electric conduction mechanisms of the bilayer films at both HRS and LRS were analysed in detail. This work presents an effective method to modulate the resistive switching behaviour of ferroelectric–ZnO heterostructures, which is significant in designing high-performance ferroelectric–semiconductor heterostructures for actual applications.
Electric-field Induced Reversible Switching of the Magnetic Easy-axis in Co/BiFeO3/SrRuO3/SrTiO3 Heterostructures

T.R. Gao,X.H. Zhang,W. Ratcliff II,S. Maruyama,M. Murakami,V. Anbusathaiah,Z. Yamani,P.J. Chen,R. Shull,R. Ramesh,I. Takeuchi

DOI: https://doi.org/10.1021/acs.nanolett.6b05152

2016-11-23

Abstract:Electric-field (E-field) control of magnetism enabled by multiferroics has the potential to revolutionize the landscape of present memory devices plagued with high energy dissipation. To date, this E-field controlled multiferroic scheme at room temperature has only been demonstrated using BiFeO3 (BFO) films grown on DyScO3 (refs 1 and 2), a unique and expensive substrate, which gives rise to a particular ferroelectric domain pattern in BFO. Here, we demonstrate reversible E-field-induced switching of the magnetic state of the Co layer in Co/BFO (001) thin film heterostructures fabricated on SrTiO3 substrates. The angular dependence of the coercivity and the remanent magnetization of the Co layer indicates that its easy axis reversibly switches by 45° back and forth between the (100) and the (110) crystallographic directions of SrTiO3 as a result of alternating application of positive and negative voltage pulses on BFO. The coercivity of the Co layer exhibits a hysteretic behavior between two states as a function of voltage. To explain the observation, we have also measured the exact canting angle of the antiferromagnetic G-type domain in BFO films for the first time using neutron diffraction. These results suggest a pathway to integrating BFO-based devices on Si wafers for implementing low power consumption and non-volatile magnetoelectronic devices.

Materials Science
Non-Volatile Ferroelectric Switching of Ferromagnetic Resonance in NiFe/PLZT Multiferroic Thin Film Heterostructures

Zhongqiang Hu,Xinjun Wang,Tianxiang Nan,Ziyao Zhou,Beihai Ma,Xiaoqin Chen,John G. Jones,Brandon M. Howe,Gail J. Brown,Yuan Gao,Hwaider Lin,Zhiguang Wang,Rongdi Guo,Shuiyuan Chen,Xiaoling Shi,Wei Shi,Hongzhi Sun,David Budil,Ming Liu,Nian X. Sun

DOI: https://doi.org/10.1038/srep32408

IF: 4.6

2016-01-01

Scientific Reports

Abstract:Magnetoelectric effect, arising from the interfacial coupling between magnetic and electrical order parameters, has recently emerged as a robust means to electrically manipulate the magnetic properties in multiferroic heterostructures. Challenge remains as finding an energy efficient way to modify the distinct magnetic states in a reliable, reversible and non-volatile manner. Here we report ferroelectric switching of ferromagnetic resonance in multiferroic bilayers consisting of ultrathin ferromagnetic NiFe and ferroelectric Pb 0.92 La 0.08 Zr 0.52 Ti 0.48 O 3 (PLZT) films, where the magnetic anisotropy of NiFe can be electrically modified by low voltages. Ferromagnetic resonance measurements confirm that the interfacial charge-mediated magnetoelectric effect is dominant in NiFe/PLZT heterostructures. Non-volatile modification of ferromagnetic resonance field is demonstrated by applying voltage pulses. The ferroelectric switching of magnetic anisotropy exhibits extensive applications in energy-efficient electronic devices such as magnetoelectric random access memories, magnetic field sensors and tunable radio frequency (RF)/microwave devices.
Resistive Switching Effect of Multiferroic Complex Oxide Solid Solution Thin Films

Fang Hu,Wenjie Ming,Liu Yang,Can Huang,Hongyang Zhao,Shuhong Xie,Zhenxiang Cheng,Tingting Jia

DOI: https://doi.org/10.1021/acsaelm.1c00465

IF: 4.494

2021-07-16

ACS Applied Electronic Materials

Abstract:Resistive switching in multiferroics has attracted increasing attention due to the potential application for next-generation nonvolatile memory and could lead to forms of computing. However, the resistive switching mechanism in solid solution oxides is unclear. In this article, we have successfully fabricated binary 0.72BiTi0.27Fe0.46Mg0.27O3-0.28LaFeO3 (BTFM-LFO) and ternary 0.625BiTi0.27Fe0.46Mg0.27O3-0.25LaFeO3-0.125La2MgTiO6 (BTFM-LFO-LMT) thin films with precise component control by the spin coating method. The solid solution films exhibit obvious ferroelectricity and magnetism at room temperature. Both binary and ternary solid solution films show switchable polarization, weak magnetism, and reversible and repeatable resistive switching effects. Multistage resistive switching behavior was observed. Four resistive switching states were obtained in the binary film; the highest Ion/off is up to 106. The influence of the film composition on the resistive switching effect was discussed. It is considered that the oxide vacancy/valance exchange-induced defects play a dominant role in the resistive switching effect of complex oxide thin films. This work provides an alternative pathway to explore the resistive switching in multiferroic oxides by fabrication of complex solid solution films.The Supporting Information is available free of charge at <a class="ext-link" href="/doi/10.1021/acsaelm.1c00465?goto=supporting-info">https://pubs.acs.org/doi/10.1021/acsaelm.1c00465</a>.SEM images of the cross-section of BTFM-LFO and BTFM-LFO-LMT films and frequency dependence of the relative dielectric permittivity and dielectric loss for the BTFM-LFO and BTFM-LFO-LMT films (<a class="ext-link" href="/doi/suppl/10.1021/acsaelm.1c00465/suppl_file/el1c00465_si_001.pdf">PDF</a>)This article has not yet been cited by other publications.

materials science, multidisciplinary,engineering, electrical & electronic
Magnetically Correlated Anisotropic Resistive Switching Manipulated by Electric Field in Co/PMN-PT Heterostructures

Shengwei Yang,Lei Feng,Dalong Zhang,Weichuan Huang,Sining Dong,Jianjun Wang,Liangjian Zou,Xiaoguang Li,Cewen Nan

DOI: https://doi.org/10.1016/j.jallcom.2015.04.239

IF: 6.2

2015-01-01

Journal of Alloys and Compounds

Abstract:The nonvolatile behaviors of magnetically correlated anisotropic resistive switching in Co/0.7 Pb(Mg1/3Nb2/3)O-3-0.3PbTiO(3) (Co/PMN-PT) multiferroic heterostructures are systematically investigated. When the polarization state of PMN-PT is reversed, a non-volatile anisotropic resistivity switch occurs, corresponding to the non-volatile 90 degrees-rotation of magnetic-easy-axis in Co film owing to the competition between magnetoelastic and interfacial anisotropies. The anisotropic magnetoresistivities (AMR) between two opposite polarization states in a field below anisotropic field also show a 90 degrees phase-shift. While at fields above anisotropic field, the AMR reveals the asymmetric cos(2)(theta)-like behaviors. The AMR manipulated by electric and magnetic fields is of benefit for studying the magnetization rotation processes. (C) 2015 Elsevier B.V. All rights reserved.
Reversible magnetism transition at ferroelectric oxide heterointerface

Jialu Chen,Zijun Zhang,Liang Luo,Yunhao Lu,Cheng Song,Di Cheng,Xing Chen,Wei Li,Zhaohui Ren,Jigang Wang,He Tian,Ze Zhang,Gaorong Han

DOI: https://doi.org/10.1016/j.scib.2020.09.024

IF: 18.9

2020-12-01

Science Bulletin

Abstract:Oxide heterointerface is a platform to create unprecedented two-dimensional electron gas, superconductivity and ferromagnetism, arising from a polar discontinuity at the interface. In particular, the ability to tune these intriguing effects paves a way to elucidate their fundamental physics and to develop novel electronic/magnetic devices. In this work, we report for the first time that a ferroelectric polarization screening at SrTiO3/PbTiO3 interface is able to drive an electronic construction of Ti atom, giving rise to room-temperature ferromagnetism. Surprisingly, such ferromagnetism can be switched to antiferromagnetism by applying a magnetic field, which is reversible. A coupling of itinerant electrons with local moments at interfacial Ti 3d orbital was proposed to explain the magnetism. The localization of the itinerant electrons under a magnetic field is responsible for the suppression of magnetism. These findings provide new insights into interfacial magnetism and their control by magnetic field relevant interfacial electrons promising for device applications.

multidisciplinary sciences
Electrical and Mechanical Switching of Ferroelectric Polarization in the 70 Nm Bifeo3 Film

Liufang Chen,Zhihao Cheng,Wenting Xu,Xiangjian Meng,Guoliang Yuan,Junming Liu,Zhiguo Liu

DOI: https://doi.org/10.1038/srep19092

IF: 4.6

2016-01-01

Scientific Reports

Abstract:Ferroelectric polarization switching and its domain evolution play a key role on the macroscopic electric properties of ferroelectric or piezoelectric devices. Mechanical switching has been reported recently in ~5 nm BaTiO3 and PbZr0.2Ti0.8O3 epitaxial films; however it is still a challenge for a mechanical force to switch polarization of a slightly thicker film in the same way as an electric field. Here, we report that the polarization of a 70 nm BiFeO3 epitaxial film can be completely switched by a mechanical force and its domain evolution is similar to that observed with electrical switching. With the gradual increase of the field/force, new domains nucleate preferentially at domain boundaries, the μm-size domains commonly decompose to a mass of nm-size domains and finally they may reorganize to μm-size domains which undergo 180o polarization switching through multi steps. Importantly, the complete mechanical switching of polarization was also established in the (0 0 1) film with a smooth surface. Furthermore, either upward or downward polarization can be read out nondestructively by a constant current. Our study sheds light on prospective applications of ferroelectrics in the absence of an electric field, such as memory devices and other micro-electromechanical systems.
Mechanically Driven Reversible Polarization Switching in Imprinted BiFeO3 Thin Films

Yue Wang,Changqing Guo,Mingfeng Chen,Yuhan Liang,Haojie Han,Hetian Chen,Yuanhua Lin,Di Yi,Houbing Huang,Ce‐Wen Nan,Jing Ma

DOI: https://doi.org/10.1002/adfm.202213787

IF: 19

2023-04-22

Advanced Functional Materials

Abstract:Mechanically driven reversible polarization switching is realized in ferroelectric BiFeO3 thin films. The reversible mechanical switching arises from the interplay among the flexoelectric effect, the piezoelectric effect, and the internal upward built‐in field in BiFeO3 films. This study gains a deeper insight into the mechanism and control of mechanically driven ferroelectric switching, and provides guidance for exploring potential ferroelectric‐based electro‐mechanical microelectronics. Mechanically driven polarization switching via scanning probe microscopy provides a valuable voltage‐free strategy for designing ferroelectric nanodomain structures. However, it is still challenging to realize reversible polarization switching with mechanical forces. Here, the mechanically driven reversible polarization switching observed in imprinted ferroelectric BiFeO3 thin films is reported, i.e., up‐to‐down switching by a sharp scanning tip and down‐to‐up switching by a blunt tip. Free energy calculations, phase‐field simulations, and piezoresponse force microscopy reveal that reversible mechanical switching arises from the interplay among the flexoelectric effect, the piezoelectric effect, and the internal upward built‐in field in BiFeO3 films. This study gains a deeper insight into the mechanism and control of mechanically driven polarization switching, and provides guidance for exploring potential ferroelectric‐based electro‐mechanical microelectronics.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
Mechanical Switching of Ferroelectric Polarization in Ultrathin Batio3 Films: the Effects of Epitaxial Strain

Zheng Wen,Xiangbiao Qiu,Chen Li,Chunyan Zheng,Xiaohui Ge,Aidong Li,Di Wu

DOI: https://doi.org/10.1063/1.4863855

IF: 4

2014-01-01

Applied Physics Letters

Abstract:Electrical switching of spontaneous polarizations has been intensively studied for decades in ferroelectric thin films for non-volatile memory applications. Recent advances have shown that the polarization in ultrathin ferroelectric films can also be switched by a mechanical loading force owing to the flexoelectric effect. In this work, we report the strain effects on the mechanical switching in 12-unit-cell-thick BaTiO3 ultrathin films grown coherently on SrRuO3-buffered SrTiO3, DyScO3, and GdScO3 substrates. The mechanical threshold for polarization reversal increases with increasing in-plane compressive strain, associated with the increased coercive field for electrical polarization switching. These are ascribed to the increase of switching barrier in BaTiO3 thin films as the compressive strain increases.
Mechanical Switching of Nanoscale Multiferroic Phase Boundaries

yongjun li,jianchao ye,xiaoxing ke,gaoyang gou,yan wei,fei xue,jing wang,chuanshou wang,renci peng,xuliang deng,yong yang,xiaobing ren,longqing chen,cewen nan,jinxing zhang

DOI: https://doi.org/10.1002/adfm.201500600

IF: 19

2015-01-01

Advanced Functional Materials

Abstract:Tuning the lattice degree of freedom in nanoscale functional crystals is critical to exploit the emerging functionalities such as piezoelectricity, shape-memory effect, or piezomagnetism, which are attributed to the intrinsic lattice-polar or lattice-spin coupling. Here it is reported that a mechanical probe can be a dynamic tool to switch the ferroic orders at the nanoscale multiferroic phase boundaries in BiFeO3 with a phase mixture, where the material can be reversibly transformed between the soft tetragonal-like and the hard rhombohedral-like structures. The microscopic origin of the nonvolatile mechanical switching of the multiferroic phase boundaries, coupled with a reversible 180 degrees rotation of the in-plane ferroelectric polarization, is the nanoscale pressure-induced elastic deformation and reconstruction of the spontaneous strain gradient across the multiferroic phase boundaries. The reversible control of the room-temperature multiple ferroic orders using a pure mechanical stimulus may bring us a new pathway to achieve the potential energy conversion and sensing applications.
Effects of interface layers and domain walls on the ferroelectric resistive switching behavior of Au/BiFeO3/La0.6Sr0.4MnO3 heterostructures.

Lei Feng,Shengwei Yang,Yue Lin,Dalong Zhang,Weichuan Huang,Wenbo Zhao,Yuewei Yin,Sining Dong,Xiaoguang Li

DOI: https://doi.org/10.1021/acsami.5b10210

IF: 9.5

2015-01-01

ACS Applied Materials & Interfaces

Abstract:The electric field effects on the electric and magnetic properties in multiferroic heterostructures are important for not only understanding the mechanisms of certain novel physical phenomena occurring at heterointerfaces but also offering a route for promising spintronic applications. Using the Au/BiFeO3/La0.6Sr0.4MnO3 (Au/BFO/LSMO) multiferroic heterostructure as a model system, we investigated the ferroelectric resistive switching (RS) behaviors of the heterostructure. Via the manipulation of the BFO ferroelectric polarizations, the non-volatile tri-state of RS is observed, which is closely related to the Au/BFO and BFO/LSMO interface layers and the highly conducting of BFO domain walls (DWs). More interestingly, according to the magnetic field dependence of the RS behavior, the negative magnetoresistance effect of the third resistance state, corresponding to the abnormal current peak in current-pulse voltage hysteresis near the electric coercive field, is also observed at room temperature, which mainly arises from the possible oxygen vacancy accumulation and Fe ion valence variation in the DWs.
Electric-Field Induced Reversible Switching of the Magnetic Easy Axis in Co/Bifeo3 on Srtio3

Tieren Gao,Xiaohang Zhang,William Ratcliff,Shingo Maruyama,Makoto Murakami,Anbusathaiah Varatharajan,Zahra Yamani,Peijie Chen,Ke Wang,Huairuo Zhang,Robert Shull,Leonid A. Bendersky,John Unguris,Ramamoorthy Ramesh,Ichiro Takeuchi

DOI: https://doi.org/10.1021/acs.nanolett.6b05152

IF: 10.8

2017-01-01

Nano Letters

Abstract:Electric-field (E-field) control of magnetism enabled by multiferroic materials has the potential to revolutionize the landscape of present memory devices plagued with high energy dissipation. To date, this E-field controlled multiferroic scheme has only been demonstrated at room temperature using BiFeO3 films grown on DyScO3, a unique and expensive substrate, which gives rise to a particular ferroelectric domain pattern in BiFeO3. Here, we demonstrate reversible electric-field-induced switching of the magnetic state of the Co layer in Co/BiFeO3 (BFO) (001) thin film heterostructures fabricated on (001) SrTiO3 (STO) substrates. The angular dependence of the coercivity and the remanent magnetization of the Co layer indicates that its easy axis reversibly switches back and forth 45° between the (100) and the (110) crystallographic directions of STO as a result of alternating application of positive and negative voltage pulses between the patterned top Co electrode layer and the (001) SrRuO3 (SRO) layer on which the ferroelectric BFO is epitaxially grown. The coercivity (HC) of the Co layer exhibits a hysteretic behavior between two states as a function of voltage. A mechanism based on the intrinsic magnetoelectric coupling in multiferroic BFO involving projection of antiferromagnetic G-type domains is used to explain the observation. We have also measured the exact canting angle of the G-type domain in strained BFO films for the first time using neutron diffraction. These results suggest a pathway to integrating BFO-based devices on Si wafers for implementing low power consumption and nonvolatile magnetoelectronic devices.

Reversible Transition of Filamentary and Ferroelectric Resistive Switching in BaTiO3/SmNiO3 Heterostructures

Asymmetric Reversible Diode-Like Resistive Switching Behaviors in Ferroelectric BaTiO 3 Thin Films

Resistive Switching in BiFeO_3 -Based Heterostructures Due to Ferroelectric Modulation on Interface Schottky Barriers

Atomic-Scale Insight into the Reversibility of Polar Order in Ultrathin Epitaxial Nb:SrTiO 3/batio 3 Heterostructure and Its Implication to Resistive Switching

Magnetization Switching In The Bife0.9mn0.1o3 Thin Films Modulated By Resistive Switching Process

Three-State Resistive Switching in Cofe2o4/Pb(Zr0.52ti0.48)O-3/Zno Heterostructure

Bipolar Resistive Switching in BiFe 0.95 Zn 0.05 O 3 Films

Mechanism of Ferroelectric Resistive Switching in Bi0.9la0.1feo3 Thin Films

Controlling Resistance Switching Polarities of Epitaxial BaTiO3 Films by Mediation of Ferroelectricity and Oxygen Vacancies

Tunable Resistive Switching Behaviour in Ferroelectric–zno Bilayer Films

Electric-field Induced Reversible Switching of the Magnetic Easy-axis in Co/BiFeO3/SrRuO3/SrTiO3 Heterostructures

Non-Volatile Ferroelectric Switching of Ferromagnetic Resonance in NiFe/PLZT Multiferroic Thin Film Heterostructures

Resistive Switching Effect of Multiferroic Complex Oxide Solid Solution Thin Films

Magnetically Correlated Anisotropic Resistive Switching Manipulated by Electric Field in Co/PMN-PT Heterostructures

Reversible magnetism transition at ferroelectric oxide heterointerface

Electrical and Mechanical Switching of Ferroelectric Polarization in the 70 Nm Bifeo3 Film

Mechanically Driven Reversible Polarization Switching in Imprinted BiFeO3 Thin Films

Mechanical Switching of Ferroelectric Polarization in Ultrathin Batio3 Films: the Effects of Epitaxial Strain

Mechanical Switching of Nanoscale Multiferroic Phase Boundaries

Effects of interface layers and domain walls on the ferroelectric resistive switching behavior of Au/BiFeO3/La0.6Sr0.4MnO3 heterostructures.

Electric-Field Induced Reversible Switching of the Magnetic Easy Axis in Co/Bifeo3 on Srtio3