Abstract:We comprehensively analyze the effects of the number and distribution of Al2O3 atomic layer deposition (ALD) cycles into a 10-nm-thick HfO2 matrix on the ferroelectric switching behavior. An ALD cycle containing one pulse for Hf (or Al) precursor and one pulse of water as reactant is repeated 150 times for the given thickness of 10 nm. Spontaneous remnant polarization (Pr) is enabled through the formation of crystalline Al-doped HfO2 (Al:HfO2) by incorporating at least two Al2O3 ALD cycles evenly into the HfO2 film under annealing at 600 °C for 3 min following W top electrode (TE) deposition. When more than four Al2O3 cycles are used, the Al elements function as leakage sources rather than stressors, resulting in an open hysteresis loop and a weak endurance of 105 cycles. Notably, an improved 2 Pr of ∼9 μC/cm2 is achieved when the Al2O3 layers are concentrated near the lower region of the HfO2. On the other hand, as the Al2O3 layers are intensively located in the upper region of the HfO2, a dielectric response is observed in the polarization–voltage and current–voltage measurements. Our results indicate that the two mechanical stresses induced by the Al dopant with a size smaller than Hf and the difference in the thermal expansion coefficient between TE and Al:HfO2 effectively activate both the lower and upper sites. Therefore, many dipoles are observed to participate in the polarization owing to the stresses that are applied evenly throughout the Al:HfO2 layer to form the orthorhombic phase.

Effect of dopant spatial distribution on ferroelectric Al-doped HfO<inf>2</inf>thin films in post-deposition annealing

Modulation of Interfacial and Electrical Properties of ALD-derived HfAlO/Al2O3/Si Gate Stack by Annealing Temperature

A synergistic interplay between dopant ALD cycles and film thickness on the improvement of the ferroelectricity of uncapped Al:HfO 2 nanofilms

Annealing Temperature Dependent Microstructure and Optical Properties of HfxTi1-xO2 Thin Films

Annealing Temperature Dependence on the Structural and Optical Properties of Sputtering-Grown High-K HfO2 Gate Dielectrics

Effects of Al doping concentration and top electrode on the ferroelectricity of Al-doped HfO2 thin films

Temperature Dependent Interfacial and Electrical Characteristics During Atomic Layer Deposition and Annealing of HfO2 Films in P-Gaas Metal–oxide–semiconductor Capacitors

Ferroelectricity in the Al doped HfO2

Effect of the number and distribution of Al2O3 atomic layer deposition cycles within HfO2 layer on ferroelectric characteristics

Understanding the Effect of Oxygen Content on Ferroelectric Properties of Al-Doped HfO Thin Films

Interfacial stress engineering toward enhancement of ferroelectricity in Al doped HfO 2 thin films

Optimizing Annealing Process for Ferroelectric Y‐Doped HfO 2 Thin Films by All‐Inorganic Aqueous Precursor Solution

Orientation control of phase transition and ferroelectricity in Al-doped HfO2 thin films

Impact of annealing temperature on the remanent polarization and tunneling electro-resistance of ferroelectric Al-doped HfOx tunnel junction memory.

Effect of annealing protection atmosphere on the ferroelectric yttrium doped hafnium oxide thin films

Concentration and correspondence of transference interpretations in short-term psychotherapy.

Effects of Thermal Annealing on the Charge Localization Characteristics of Hfo2/Au/Hfo2 Stack

Investigation of temperature-dependent ferroelectric properties of Y-doped HfO2 thin film prepared by medium-frequency reactive magnetron co-sputtering

Effect of Lanthanum-Aluminum Co-Doping on Structure of Hafnium Oxide Ferroelectric Crystals.

Effect of post-deposition annealing on electrical properties and structures of aluminum oxide passivation film on a crystalline silicon substrate

Physical Mechanisms Behind the Annealing Temperature Effect on Ferroelectric Phase in HfAlO FTJs by First-Principles Calculations