Complementary Memory Cell Based on Field-Programmable Ferroelectric Diode for Ultra-Low Power Current-SA Free BNN Applications

Qing Luo,Bing Chen,Rongrong Cao,Xiaoyong Xue,Keji Zhou,Jianguo Yang,Xu Zheng,Haoran Yu,Jie Yu,Tiancheng Gong,Xiaoxin Xu,Peng Yuan,Xiaoyan Li,Lu Tai,Qi Liu,Hangbing Lv,Ming Liu
DOI: https://doi.org/10.1109/iedm19573.2019.8993545
2019-01-01
Abstract:In this work, we proposed a complementary memory cell with 2T4D XNOR structure for computing in memory (CIM) applications. Firstly, a field-programmable diode (FPD) was demonstrated with a W/Hf 0 5Zr 0 5O 2 (HZO)/W structure. After analyzing the mechanism of FPD device, a 1T2D structure was proposed for voltage-output memory application featuring stable voltage ratio (~0.9 V), read disturbance immunity (>10 9 ) and ultra-low leakage current (<; 5 pA). For binary neuron network (BNN) application, a 2T4D XNOR cell-based CSA-free BNN architecture is proposed with small cell area (16 F 2 ) and superior efficiency (387 TOPS/W).
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