Abstract:Impacts of source/drain (S/D) recess engineering on the device performance of both the gate-all-around (GAA) nanosheet (NS) field-effect transistor (FET) and FinFET have been comprehensively studied at 5 nm node technology. TCAD simulation results show that the device off-leakage, including subthreshold leakage through the channel (Isub) and punch-through leakage (IPT) in the sub-channel, is strongly related to the S/D recess process. Firstly, device electrical characteristics such as current density distributions, On/Off-state current (Ion, Ioff), subthreshold swing (SS), RC delay, and gate capacitance (Cgg) are investigated quantitatively for DC/AC performance evaluation and comparison according to S/D lateral recess depth (Lrcs) variations. For both device types, larger Lrcs will result in a shorter effective channel length (Leff), so that the Ion and Ioff simultaneously increase. At the constant Ioff, the Lrcs can be optimized to enhance the device’s drivability by ~3% and improve the device’s RC delay by ~1.5% due to a larger Cgg as a penalty. Secondly, S/D over recess depth (Hrcs) in the vertical direction severely affects the punch-through leakage in the Sub-Fin or bottom parasitic channel region. The NSFET exhibits less Ioff sensitivity provided that it can be well controlled under 12 nm since the bottom parasitic channel is still gated. Furthermore, with both Hrcs and Lrcs accounted for in the device fabrication, the NSFET still shows better control of the off-leakage in the intrinsic and bottom parasitic channel regions and ~37% leakage reduction compared with FinFETs, which would be critical to enable further scaling and the low standby power application. Finally, the S/D recess engineering strategy has been given: a certain lateral recess could be optimized to obtain the best drive current and RC delay, while the vertical over-recess should be in tight management to keep the static power dissipation as low as possible.

Punch-through and DIBL Effects Exposing Nano-node SOI FinFETs under Heat Stress

Electrothermal characterization of SOI FinFETs

DIBL Effect Gauging the Integrity of Nano-node N-Channel FinFETs

Electrothermal-Stress Interactions of LDMOS FET Induced by DCI RF-Pulses

V<inf>T</inf> implant energy impacting DIBL and punch-through effects of nano-node n-channel FinFETs on SOI wafers

Punch-through and Junction Breakdown Characteristics for Uniaxial Strained Nano-Node Metal-Oxide-semiconductor Field-Effect Transistors on (100) Wafers

Heat stress exposing performance of deep-nano HK/MG nMOSFETs using DPN or PDA treatment

Early effect exposing performance of 28nm HK/MG pMOSFETs under PDA or DPN nitridation treatment

Heating stress probing electrical performance of multiple N-channel FinFETs with VT doping energies

Multiphysics Simulation Study of Thermal Stress Effects in Nanoscale FinFETs Heterogeneously Integrated with GaN High-Power Device on Silicon Substrate

Impact of TSV Induced Thermo-Mechanical Stress on Semiconductor Device Performance

Total-Ionizing-Dose Effects and Low-Frequency Noise in 30-Nm Gate-Length Bulk and SOI FinFETs with SiO2/HfO2Gate Dielectrics

The DIBL Effect of SOI P-Channel FinFETs under Various SDE Lengths

Suppression of Stress-Induced Defects in FinFET by Implantation and STI Co-Optimization

Comprehensive study of the impact of TSV induced thermo-mechanical stress on 3D IC device performance

Investigation of Source/Drain Recess Engineering and Its Impacts on FinFET and GAA Nanosheet FET at 5 Nm Node

Amplification Gain of Nano-node Channel-width nMOSFETs with Thermal Annealing Treatments of DPN Processes

Parametric Studies of Nanoscale Through-Silicon Vias under the Reflow in Advanced Packaging

Investigation Of Dibl Degradation In Nanoscale Finfets Under Various Hot Carrier Stresses

Electrical Performance of 28 nm-Node Varying Channel-Width nMOSFETs under DPN Process Treatments

Stress Impact of the Annealing Procedure of Cu-Filled TSV Packaging on the Performance of Nano-Scaled MOSFETs Evaluated by an Analytical Solution and FEA-Based Submodeling Technique