Abstract:An In0.83Ga0.17As/InAs0.3P0.65Sb0.05 multiple quantum well (MQW) light emitting diode (LED) atop high‐quality n+‐InAsyP1‐y metamorphic buffers is developed to achieve short‐wave infrared emission surpassing 2 μm. The resulting InGaAs/InAsPSb MQW LED has superior emission properties, including a nearly constant emission wavelength with increased current injection, high external quantum efficiency, and low efficiency droop. Solid‐state infrared sources designed to emit wavelengths above 2 μm often face challenges in achieving high emission efficiency, minimizing power consumption, and reducing fabrication costs. In response, a 2.4 μm wavelength light emitting diode (LED) is developed using metamorphic In0.83Ga0.17As/InAs0.3P0.65Sb0.05 multiple quantum well (MQW) heterostructures. The substantial conduction (94 meV) and valence band offsets (300 meV) within this type‐I MQW LED architecture result in strong carrier confinement, improving electron and hole wavefunction overlap. Despite a notable lattice mismatch of 2.0% between the MQWs and InP substrate, the resulting LED wafer exhibits exceptionally low surface roughness (1.1 nm) and well‐defined, sharp interfaces within the heterostructures. Furthermore, this MQW LED exhibits favorable emission properties, including a low turn‐on field, minimal efficiency droop, and stable emission wavelength across varying injection currents. These advancements underscore the potential of such short‐wave infrared emitters for scalable applications in fields such as inspection, optical on‐chip communication, and biomedical diagnostics.

Cryogenic Characteristics of GaAs-based Near-Infrared Light Emitting Diodes

GaAlAs DH high-brightness red LED

Morphological, optical, and electrical characterizations and cryogenic reliability tests on AlInGaP red light emitting diodes immersed in liquid nitrogen

Optimization of the Cryogenic Light-Emitting Diodes for High-Performance Broadband Terahertz Upconversion Imaging

LOW TEMPERATURE ELECTROLUMINESCENCE OF GREEN AND DEEP GREEN GaInN/GaN LIGHT EMITTING DIODES

Emissions of the InGaN/GaN MQW LEDs with the InGaN well layer grown at different temperatures

A Thermal Analysis of the Operation of Microscale, Inorganic Light-Emitting Diodes

Junction Temperature Measurements and Thermal Modeling of GaInN/GaN Quantum Well Light-Emitting Diodes

Light‐Emitting Diodes: High‐Efficiency, Microscale GaN Light‐Emitting Diodes and Their Thermal Properties on Unusual Substrates (small 11/2012)

Thermal Properties of Microscale Inorganic Light-Emitting Diodes in a Pulsed Operation

Study on 3D Thermal Transport in Micro-Leds on GaN Substrate at the Level of Kw/cm2

High-Efficiency, Microscale Gan Light-Emitting Diodes and Their Thermal Properties on Unusual Substrates

Thermal Management for Microscale Inorganic Light-Emitting Diodes

Erbium‐Hyperdoped Silicon Quantum Dots: A Platform of Ratiometric Near‐Infrared Fluorescence

Loss of Quantum Efficiency in Green Light Emitting Diode Dies at Low Temperature

Comparison of Temperature Dependent Electroluminescence of InGaN/GaN and AlGaInP Based LEDs

Study of Temperature Dependent Electroluminescence of InGaN/GaN Multiple Quantum Wells Using Low Temperature Scanning Near-Field Optical Microscopy

Optical Properties of GaN-Based Green Light-Emitting Diodes Influenced by Low-Temperature p-GaN Layer

Study on Optical Properties and Internal Quantum Efficiency Measurement of GaN-based Green LEDs

Metamorphic InGaAs/InAsPSb Quantum Well Light Emitting Diodes for Operation in the Short‐Wave Infrared Region

Mid-infrared interband cascade light-emitting diodes with InAs/GaAsSb superlattices on InAs substrates