Abstract:AlGaN-based deep-ultraviolet (DUV) LEDs could realize higher optical power output when adopting a p-AlGaN contact layer instead of a p-GaN contact layer. However, this new type DUV LEDs exhibit poor reliability. Thus, this study thoroughly investigates the degradation behaviors of AlGaN-based DUV LEDs with a p-AlGaN contact layer through different aging tests, including single thermal stress, single electrical stress with air-cooling, single electrical stress, and thermoelectric complex stress. It can be found that both high temperature and large working current play crucial roles in accelerating the degradation of optoelectronic properties of the DUV LEDs, and the single high thermal stress without electrical stress can also bring obvious performance degradation to the DUV LEDs, which is a significantly different finding from previous studies. This is because thermal stress on DUV LED could bring some metal electrode elements entering the p-AlGaN layer. Thus, the degradation of optical and electrical properties under the thermal and electrical stress could be not only attributed to the degradation of the device's ohmic contacts, but also due to the metal electrode elements entering the p-AlGaN layer through thermal diffusion, leading to the generation of tunneling current and the generation of defects within or around the active region. Despite that the peak wavelengths of the DUV LEDs remained stable, the turn-on voltage and series resistance increased. Particularly worth mentioning is that the value of the optical power degradation under thermoelectric conditions is larger than the sum of the single thermal and single electrical optical power degradation, which is a result of the mutual reinforcement of thermal and electrical stresses to exacerbate the defect generation and ohmic contact degradation. Based on the study above, preparing p-AlGaN layers with hyperfine gradient aluminum fractions and reducing the junction temperature may help to improve the reliability of AlGaN-based DUV LEDs with the p-AlGaN contact layer.

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Degradation of AlGaInP light emitting diodes under reverse-bias operations in salty water vapor

Effect of the AlN strain compensation layer on InGaN quantum well red-light-emitting diodes beyond epitaxy

Optimization of growth parameters of AlN thin films and investigation of electrical and electroluminescence characteristics from Au/i-AlN/n-GaN UV light-emitting diode

Analysis of the Mechanisms by Which Sputtered AlN Nucleation Layers Enhance the Performance of Red InGaN-based LEDs

Nuclear science and optical studies of InAlGaP materials grown on GaAs by metalorganic chemical vapor deposition

Optical Properties of GaN-Based Green Light-Emitting Diodes Influenced by Low-Temperature p-GaN Layer

Study of Electrical and Optical Properties of InGaN/AlGaN Double Heterostructure Blue Light Emitting Diodes

Structural and Optical Properties of Nonpolar m-Plane GaN and GaN-Based LEDs on ?-LiAlO2

Effect of V-Shaped pits on optical properties of GaN-Based green light-emitting diodes

The Influences of Sputtered AlN Buffer Layer on AlInGaN Based Blue and Near‐ultraviolet Light Emitting Diodes

Study of Temperature Dependent Electroluminescence of InGaN/GaN Multiple Quantum Wells Using Low Temperature Scanning Near-Field Optical Microscopy

Thermal behavior of AlGaN-based deep-UV LEDs

LOW TEMPERATURE ELECTROLUMINESCENCE OF GREEN AND DEEP GREEN GaInN/GaN LIGHT EMITTING DIODES

Nonpolar M-Plane Thin Film Gan and Ingan/Gan Light-Emitting Diodes on Lialo2(100) Substrates

Junction Temperature, Spectral Shift, and Efficiency in GaInN-based Blue and Green Light Emitting Diodes

Study on 3D Thermal Transport in Micro-Leds on GaN Substrate at the Level of Kw/cm2

Structural and Optical Properties of Nonpolar m-Plane GaN and GaN-Based LEDs on γ-LiAlO <sub>2</sub>

Study on the Degradation Performance of AlGaN-Based Deep Ultraviolet LEDs under Thermal and Electrical Stress

Effects of the P-Alingan/gan Superlattices' Structure on the Performance of Blue LEDs

Low-Temperature Scanning Near-Field Optical Microscope and Spectroscopy: Application in Quantum Well Device