Abstract:A lattice temperature model is derived for oxide-confined vertical cavity surface emitting lasers (VCSELs) based on carrier transport and the conservation of energy. Peltier heat is caused by the bandedge and quasi-Fermi level discontinuities at a heterojunction. However, considering the device size, Peltier heat needs to be distributed and is not just generated at the interface, otherwise, an anomolous spike in temperature will occur. We have developed a novel treatment to model the Peltier heat at a heterojunction by use of a Monte Carlo simulation. Peltier heat is found to be a major heat contributor, and it results in a rapid and high temperature rise in the separate confinement heterostructure (SCH) region of the laser diode. We have also shown that the carrier thermal conductivities for materials with high mobilities must be included at high carrier densities because they contribute to additional spreading of the thermal energy. Subsequently, this lattice temperature model is coupled self-consistently to electronic and optical solvers to form a complete simulator for VCSELs. Self-heating causes a fast temperature rise when the VCSEL is operated under continuous wave conditions, causing resonant wavelength changes and an eventual thermal rollover. The resonant wavelength shift has been shown to be caused mainly by the heating of the distributed Bragg reflectors even though the peak temperature occurs within the SCH region. Possible physical factors causing the thermal rollover have also been examined with our complete simulator. The Auger recombination process is found to be one of the main factors causing the thermal rollover in 980 nm oxide-confined VCSELs while the photon lifetime is a factor in determining the position of the thermal rollover. We have also achieved a very good match between our simulated results and experimental data.

Local Heat and Mass Transfer Characteristics of Different Channel Configurations in Polysilicon Chemical Vapor Deposition Reactor

Heat and mass transfer characteristics of three-dimensional bell-shaped polysilicon chemical vapor deposition reactor

International Conference on Applied Energy – ICAE 2016 Improvement of Heat and Mass Transfer Performance in a Polysilicon Chemical Vapor Deposition Reactor with Field Synergy Principle L

Simulation of Heat Transfer in a Vertical Tubular CVD Reactor

CFD-Aided Design for Polysilicon Production System

Multiphysics Characterization of Polymer‐filled Through‐silicon Vias (pf‐tsvs) for Three‐dimensional Integration

Modeling Of Two-Dimensional Dynamic Temperature Distribution Of A Lpcvd Process And Control Design By Mpc

Lattice Temperature Model and Temperature Effects in Oxide-Confined VCSEL’s

Numerical Analysis of the Chemical Vapor Deposition of Polysilicon in a Trichlorosilane and Hydrogen System

Development of a polysilicon chemical vapor deposition reactor using the computational fluid dynamics method

A transport-kinetic model development for polysilicon chemical vapor deposition in a SiHCl3–H2 system

Numerical and experimental study of polysilicon deposition on silicon tubes

Numerical Simulation of Multiple Polysilicon Cvd Reactors Connected in Series Using Cfd Method

A Revisit from CVD Kinetics to CVD Reactor: Investigating Uniform Growth Mechanism of Polysilicon in a Reduction Furnace

Optimization of Operating Parameters in Polysilicon Chemical Vapor Deposition Reactor with Response Surface Methodology

Study on Deposition Conditions in Coupled Polysilicon CVD Furnaces by Simulations

Numerical Solution for Radiative Heat Transfer in a Novel Polysilicon CVD Reactor

Investigation of heat transfer mechanism affecting temperature homogeneity at polysilicon rods in a Siemens reduction furnace

Silane Pyrolysis to Silicon Rod in A Bell-Jar Reactor at High Temperature and Pressure: Modeling and Simulation

Simulation of temperature profile and design of heat transfer structure for reactor of film growth on Si-wafer

Study on the Effect of Melt Flow Behavior on the Uniformity of Phosphorus Doping During the Growth of Large-Size N-Type Monocrystalline Silicon by Czochralski Method