Development of a polysilicon chemical vapor deposition reactor using the computational fluid dynamics method

Zheqing Huang,Chunjiang Liu,Xigang Yuan,Shiping Liu,Feng Liu
DOI: https://doi.org/10.1149/2.027311jss
IF: 2.2
2013-01-01
ECS Journal of Solid State Science and Technology
Abstract:A novel reactor with low energy consumption has been developed, based on the traditional polysilicon chemical vapor deposition (CVD) reactor; a three-dimensional computational fluid dynamics theoretical model to describe various transport phenomena in the reactor is proposed, which was verified by comparison of simulated results with industrial data for a traditional polysilicon CVD reactor. The velocity profile, temperature field, concentration distribution, and energy consumption of the traditional reactor and novel reactor were analyzed. The simulation results demonstrated that the flow pattern of the gas mixture in the novel reactor approximates a plug flow model, which is fundamentally different from that of the traditional reactor, and that the temperature field can be controlled by changing the novel reactor operating parameters. Because gas-phase temperatures in the novel reactor are controllable, silicon powder generation can greatly inhibited, allowing for greatly reduced contamination of the reactor inner wall (above 95%). Simulation results revealed that the energy consumption by the novel reactor could be greatly reduced as a result of lower radiation on the cleaner inner wall. (C) 2013 The Electrochemical Society. All rights reserved.
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