Abstract:In2Se3/InSe vertical heterojunctions are prepared with specific phases by optimizing the growth conditions using 2D InSe as the seeding material. Meanwhile, the microstructural mechanism for the temperature‐dependent phase evolution of β‐In2Se3, 3R α‐In2Se3, and 2H α‐In2Se3 is revealed by using the state‐of‐the‐art Cs‐STEM technique. It has been found that β‐In2Se3 is the intermediate state for the phase transition between different In2Se3 polymorphs. The polymorphic nature of In2Se3 leads to excellent phase‐dependent physical properties including ferroelectricity, photoelectricity, and especially the intriguing phase change ability, making the precise phase modulation of In2Se3 of fundamental importance but very challenging. Here, the growth of In2Se3 with desired‐phase is realized by temperature‐controlled selenization of van der Waals (vdW) layered bulk γ‐InSe. Detailed results of Raman spectroscopy, scanning electron microscopy (SEM), and state‐of‐the‐art spherical aberration‐corrected transmission electron microscopy (Cs‐TEM) clearly and consistently show that β‐In2Se3, 3R α‐In2Se3, and 2H α‐In2Se3 can be perfectly obtained at ≈270, ≈300, and ≈600 °C, respectively. Further comprehensive atomic imaging analyses confirm that the seeding material, InSe, plays a critical role in the low‐temperature epitaxial growth of vdW‐layered In2Se3, and, more interestingly, β‐In2Se3 acts as an intermediate phase between 3R and 2H α‐In2Se3 transitions. This investigation not only provides a simple yet versatile strategy for the phase modulation of In2Se3, but also sheds light on the temperature‐dependent phase evolution of In2Se3.

Atomically Resolving Polymorphs and Crystal Structures of In2Se3

Phase Identification and Strong Second Harmonic Generation in Pure Ε-Inse and Its Alloys.

Controlled Synthesis of High-Quality Monolayered Α-In2se3 Via Physical Vapor Deposition.

Anisotropic Spectroscopy and Electrical Properties of 2D ReS2(1–x)Se2x Alloys with Distorted 1T Structure

Controlled Growth of Atomically Thin In2se3 Flakes by Van Der Waals Epitaxy

Phase Tailoring of In2Se3 Toward van der Waals Vertical Heterostructures via Selenization of γ‐InSe Semiconductor

First-principles investigation of structural and electronic properties of α phase In2Se3

Atomistic structures and phase transition of In2Se3 nanowires studied by DFT calculations and synchrotron radiation X-ray diffraction

Atomic-Scale Observation of Reversible Thermally Driven Phase Transformation in 2D In2Se3

Atomic Construction and Spectroscopic Characterization of FeSe-derived Thin Films on SrTiO3 Substrates

Substrate-induced phase control of In2Se3 thin films

Characteristic Plasmon Energies for 2D In2Se3 Phase Identification at Nanoscale

Reversible Thermally Driven Phase Change of Layered In2Se3 for Integrated Photonics.

Compelling Evidence for the Ε‐phase InSe Crystal by Oblique Incident Second Harmonic Generation

Low-Dimensional In2Se3 Compounds: from Material Preparations to Device Applications.

Atomic Structure and Electronic Property of Two-Dimensional Ferroelectric CuInP2Se6

Selectable Growth and Electronic Structures of Two-Dimensional Layered InSe and In2Se3 Films

Recent advances of phase transition and ferroelectric device in two-dimensional In2Se3

Discovery of New Phases of Bismuth Oxyselenide Semiconductor Bi2OSe2 by Global Structure Search Approach

Structural and Electronic Properties of Amorphous and Polycrystalline In2Se3 Films

Structure Family and Polymorphous Phase Transition in the Compounds with Soft Sublattice: Cu2Se As an Example.