Abstract:In2Se3/InSe vertical heterojunctions are prepared with specific phases by optimizing the growth conditions using 2D InSe as the seeding material. Meanwhile, the microstructural mechanism for the temperature‐dependent phase evolution of β‐In2Se3, 3R α‐In2Se3, and 2H α‐In2Se3 is revealed by using the state‐of‐the‐art Cs‐STEM technique. It has been found that β‐In2Se3 is the intermediate state for the phase transition between different In2Se3 polymorphs. The polymorphic nature of In2Se3 leads to excellent phase‐dependent physical properties including ferroelectricity, photoelectricity, and especially the intriguing phase change ability, making the precise phase modulation of In2Se3 of fundamental importance but very challenging. Here, the growth of In2Se3 with desired‐phase is realized by temperature‐controlled selenization of van der Waals (vdW) layered bulk γ‐InSe. Detailed results of Raman spectroscopy, scanning electron microscopy (SEM), and state‐of‐the‐art spherical aberration‐corrected transmission electron microscopy (Cs‐TEM) clearly and consistently show that β‐In2Se3, 3R α‐In2Se3, and 2H α‐In2Se3 can be perfectly obtained at ≈270, ≈300, and ≈600 °C, respectively. Further comprehensive atomic imaging analyses confirm that the seeding material, InSe, plays a critical role in the low‐temperature epitaxial growth of vdW‐layered In2Se3, and, more interestingly, β‐In2Se3 acts as an intermediate phase between 3R and 2H α‐In2Se3 transitions. This investigation not only provides a simple yet versatile strategy for the phase modulation of In2Se3, but also sheds light on the temperature‐dependent phase evolution of In2Se3.

Atomistic structures and phase transition of In2Se3 nanowires studied by DFT calculations and synchrotron radiation X-ray diffraction

Structural Phase Transition of Multilayer VSe2.

Controlled Growth of Atomically Thin In2se3 Flakes by Van Der Waals Epitaxy

Reversible Thermally Driven Phase Change of Layered In2Se3 for Integrated Photonics.

Lithium Ion Intercalation-Induced Metal-Insulator Transition in Inclined-Standing Grown 2D Non-Layered Cr2S3 Nanosheets

Recent advances of phase transition and ferroelectric device in two-dimensional In2Se3

Synthesis and Phase Transformation of In2se3 and Cuinse2 Nanowires

Modulation of opto-electronic properties of InSe thin layers via phase transformation

Atomic observation of phase transition in layered SnS 2 driven by in situ heating and electron beam irradiation

First-principles investigation of structural and electronic properties of α phase In2Se3

Phase Tailoring of In2Se3 Toward van der Waals Vertical Heterostructures via Selenization of γ‐InSe Semiconductor

Characteristic Plasmon Energies for 2D In2Se3 Phase Identification at Nanoscale

Nanoscale Electronic Inhomogeneity in In2Se3 Nanoribbons Revealed by Microwave Impedance Microscopy

Morphology-tunable In2Se3 Nanostructures with Enhanced Electrical and Photoelectrical Performances Via Sulfur Doping

Nanoscale Behavior and Manipulation of the Phase Transition in Single-Crystal Cu2Se

Electronic and optical properties of two-dimensional III2-VI3 materials with the FE-WZ′ structure

Structural investigation of the insulator-metal transition in NiS$_{2-x}$Se$_x$ compounds

Atomic-Scale Probing of Reversible Li Migration in 1T-V 1+ x Se 2 and the Interactions between Interstitial V and Li.

Phase Transition of single-layer vanadium diselenide on Au(111) with distinguished electronic structures

Phase Instability in Van Der Waals In2Se3 Determined by Surface Coordination

First-principles study of phase transition in the α-In2Se3/metal heterostructures