Phase Tailoring of In2Se3 Toward van der Waals Vertical Heterostructures via Selenization of γ‐InSe Semiconductor
Beituo Liu,Rui Ge,Fangyu Yue,Yufan Zheng,Fengrui Sui,Yilun Yu,Rong Huang,Ruijuan Qi,Chungang Duan
DOI: https://doi.org/10.1002/smtd.202401770
IF: 12.4
2024-11-29
Small Methods
Abstract:In2Se3/InSe vertical heterojunctions are prepared with specific phases by optimizing the growth conditions using 2D InSe as the seeding material. Meanwhile, the microstructural mechanism for the temperature‐dependent phase evolution of β‐In2Se3, 3R α‐In2Se3, and 2H α‐In2Se3 is revealed by using the state‐of‐the‐art Cs‐STEM technique. It has been found that β‐In2Se3 is the intermediate state for the phase transition between different In2Se3 polymorphs. The polymorphic nature of In2Se3 leads to excellent phase‐dependent physical properties including ferroelectricity, photoelectricity, and especially the intriguing phase change ability, making the precise phase modulation of In2Se3 of fundamental importance but very challenging. Here, the growth of In2Se3 with desired‐phase is realized by temperature‐controlled selenization of van der Waals (vdW) layered bulk γ‐InSe. Detailed results of Raman spectroscopy, scanning electron microscopy (SEM), and state‐of‐the‐art spherical aberration‐corrected transmission electron microscopy (Cs‐TEM) clearly and consistently show that β‐In2Se3, 3R α‐In2Se3, and 2H α‐In2Se3 can be perfectly obtained at ≈270, ≈300, and ≈600 °C, respectively. Further comprehensive atomic imaging analyses confirm that the seeding material, InSe, plays a critical role in the low‐temperature epitaxial growth of vdW‐layered In2Se3, and, more interestingly, β‐In2Se3 acts as an intermediate phase between 3R and 2H α‐In2Se3 transitions. This investigation not only provides a simple yet versatile strategy for the phase modulation of In2Se3, but also sheds light on the temperature‐dependent phase evolution of In2Se3.
materials science, multidisciplinary,chemistry, physical,nanoscience & nanotechnology