Abstract:The combination of ultrathin-barrier (UTB) AlGaN (<; 6 nm)/GaN heterostructure and a charge-modulated SiNx grown by low-pressure chemical vapor deposition (LPCVD) is a promising technique for development of GaN-based millimeter-wave power amplifiers and recessfree enhancement-mode (E-mode) power switches. The LPCVD-SiN x passivation is capable of inducing high density of positive charges at the SiN x /(Al)GaN interface (~3.50 × 10 13 cm -2 ), ensuring efficient recovery of 2-D electron gas (2-DEG) density that is comparable with conventional AlGaN/GaN heterostructure. Temperature-dependent Hall measurements and scattering mechanism simulations confirm the positive interfacial charges as well as interface states with density below 10 13 cm -2 and exert weak remote coulombic scattering of 2-DEG in metal-insulator- semiconductor heterojunction field-effect transistors (MIS-HFETs), which warrants a low ON-resistance of UTBAlGaN/GaN-based devices. UTB-AlGaN (<; 6 nm)/GaN heterostructure with LPCVD-SiN x passivation is a compelling technology platform for fabrication of high-frequency power amplifiers and high-efficiency E-mode power switches.

Ultrathin-Barrier AlGaN/GaN Hybrid-Anode-Diode with Optimized Barrier Thickness for Zero-Bias Microwave Mixer

HAD Fabricated on UTB AlGaN/GaN Heterostructure for High-Sensitivity Zero-Bias Microwave Detection

Zero-Bias Mixer Based on AlGaN/GaN Lateral Field-Effect Diodes for High-Temperature Wireless Sensor and RFID Applications

Lateral AlGaN/GaN Diode with MIS-gated Hybrid Anode for High-Sensitivity Zero-Bias Microwave Detection

High-dynamic-range zero-bias microwave detector using AlGaN/GaN-based lateral field-effect diode

Wide-Dynamic-Range Zero-Bias Microwave Detector Using AlGaN/GaN Heterojunction Field-Effect Diode

Design and Analysis of an Ultrawide-Band Distributed Drain-Pumped Mixer Using 0.18µm CMOS Technology

A 27 - 57 GHz Down-conversion Mixer with Bulk Injection Technique

High sensitivity AlGaN/GaN lateral fieldeffect rectifier for zero-bias microwave detection

A Novel Ultra-thin-barrier AlGaN/GaN MIS-gated Hybrid Anode Diode Featuring Improved High-temperature Reverse Blocking Characteristic

Ultrathin Barrier AlGaN/GaN Hybrid‐anode‐diode with MOCVD In‐situ Si 3 N 4 ‐cap and LPCVD‐Si 3 N 4 Bilayer Passivation Stack for Dynamic Characteristic Improvement

Improved Turn-On Voltage Controllability in AlGaN/GaN Gated-Anode Diodes Using Etch Endpoint Detection Layer

High-Performance Ultrathin-Barrier AlGaN/GaN Hybrid Anode Diode With Al<sub>2</sub>O<sub>3</sub> Gate Dielectric and <i>In Situ</i> Si<sub>3</sub>N<sub>4</sub>-Cap Passivation

AlGaN/GaN Heterostructure Schottky Barrier Diodes with Graded Barrier Layer

High-Efficiency Millimeter-Wave Enhancement-Mode Ultrathin-Barrier AlGaN/GaN Fin-HEMT for Low-Voltage Terminal Applications

Ultrathin-Barrier AlGaN/GaN Heterostructure: A Recess-Free Technology for Manufacturing High-Performance GaN-on-Si Power Devices

Interface Charge Effects on 2-D Electron Gas in Vertical-Scaled Ultrathin-Barrier AlGaN/GaN Heterostructure

Tri-Gated Hybrid Anode AlGaN/GaN Power Diode with Intrinsic Low Turn-on Voltage and Ultralow Reverse Leakage Current

The Study of 0.34 Thz Monolithically Integrated Fourth Subharmonic Mixer Using Planar Schottky Barrier Diode

Novel AlGaN/GaN SBDs with Nanoscale Multi-Channel for Gradient 2DEG Modulation

Si/AlN p-n heterojunction interfaced with ultrathin SiO2