Abstract:This paper presents novel multi-channel RF lateral Schottky-barrier diodes (SBDs) based on AlGaN/GaN on low resistivity (LR) (σ = 0.02 Q·cm) silicon substrates. The developed technology offers a reduction of 37% in onset voltage, VON (from 1.34 to 0.84 V), and 36% in ON-resistance, RON (1.52 to 0.97 to Ω·mm), as a result of lowering the Schottky barrier height, Φn, when compared to conventional lateral SBDs. No compromise in reverse-breakdown voltage or reverse-bias leakage current performance was observed as both multi-channel and conventional technologies exhibited a VBV of (VBV > 30 V) and an IR of (IR < 38 μA/mm), respectively. Furthermore, a precise small-signal equivalent circuit model was developed and verified for frequencies up to 110 GHz. The fabricated devices exhibited cut-off frequencies of up to 0.6 THz, demonstrating the potential use of lateral AlGaN/GaN SBDs on LR silicon for high-efficiency, high-frequency integrated circuits' applications. The paper begins with a brief outline of the basic Schottky-contact diode operation. A series resistance analysis of the diode studied in this project is discussed. The small signal equivalent circuit of the Schottky-contact diode is presented. The layout of the diodes studied is described, and their fabrication techniques are briefly mentioned. DC, RF, and low frequency C-V measurement techniques and measurements to characterize the diodes are outlined. Finally, results and discussions on the effects of multiple recesses under the Schottky-contact (anode) obtained from the I-V diode characteristics and C-V measurements, and the small signal equivalent circuit deduced from RF measurements for different diode configurations, are presented.

Zero-Bias Mixer Based on AlGaN/GaN Lateral Field-Effect Diodes for High-Temperature Wireless Sensor and RFID Applications

High-dynamic-range zero-bias microwave detector using AlGaN/GaN-based lateral field-effect diode

Ultrathin-Barrier AlGaN/GaN Hybrid-Anode-Diode with Optimized Barrier Thickness for Zero-Bias Microwave Mixer

A 27 - 57 GHz Down-conversion Mixer with Bulk Injection Technique

Wide-Dynamic-Range Zero-Bias Microwave Detector Using AlGaN/GaN Heterojunction Field-Effect Diode

Lateral AlGaN/GaN Diode with MIS-gated Hybrid Anode for High-Sensitivity Zero-Bias Microwave Detection

High sensitivity AlGaN/GaN lateral fieldeffect rectifier for zero-bias microwave detection

HAD Fabricated on UTB AlGaN/GaN Heterostructure for High-Sensitivity Zero-Bias Microwave Detection

A 2.1–2.5 GHz high linearity and low noise down-conversion active mixer

The Study of 0.34 Thz Monolithically Integrated Fourth Subharmonic Mixer Using Planar Schottky Barrier Diode

High-Responsivity, Low-Noise, Room-Temperature, Self-Mixing Terahertz Detector Realized Using Floating Antennas on A Gan-Based Field-Effect Transistor

A High-Performance 330-GHz Subharmonic Mixer Using Schottky Diodes

Development and Modelling of Gallium Nitride Based Lateral Schottky Barrier Diodes with Anode Recesses for mmWave and THz Applications

Si/AlN p-n heterojunction interfaced with ultrathin SiO2

A High-Rf-bandwidth, High-if-bandwidth Monolithic Terahertz Heterodyne Receiver Based on AlGaN/GaN Nonlinear Transmission Lines As a Local Oscillator and Mixer

Si/AlN p-n heterojunction interfaced with ultrathin SiO 2

340 GHz Double-Sideband Mixer Based on Antenna-Coupled High-Temperature Superconducting Josephson Junction

AlGaN/GaN High Electron Mobility Transistor Amplifier for High-Temperature Operation

A mixer architecture using GaN-based split-gate nanowire transistor

Ultrawide bandgap semiconductor heterojunction p-n diodes with distributed polarization doped p-type AlGaN layers on bulk AlN substrates