Abstract:Semiconductor temperature sensors have been widely used in medical, industrial, aviation and civil fields due to their advantages such as high sensitivity, small size, low power consumption and strong anti-interference ability. However, most Si-based temperature sensors are not suitable for the application in high-temperature environments. The new AlGaN/GaN heterojunction material not only has a wide band gap, but also has a high two-dimensional electron gas concentration and carrier mobility. Therefore, the device made with it not only has good electrical properties, but also can be applied in ultra-high environments. In this paper, a temperature sensor based on gateless AlGaN/GaN high electron mobility transistor structure was fabricated and its temperature-dependent electrical properties were characterized. The temperature dependence of current-voltage characteristics of the device were tested from 50 to 400 degrees C. The sensitivity of the device was studied as a function of the channel aspect ratio of the device. The stability of electrical properties was characterized after heating in air and nitrogen at 300-500 degrees C for 1 hour. The theoretical and experimental results show that as the aspect ratio of the device increases, the sensitivity of the device increases. At a fixed current of 0.01 A, the average sensitivity of the device voltage with temperature changes is 44.5 mV/degrees C. Meanwhile, the good high temperature retention stability is shown during stability experiments.

AlGaN/GaN High Electron Mobility Transistor Amplifier for High-Temperature Operation

Growth and fabrication of GaN/AlGaN heterojunction bipolar transistor

Suppressing Temperature Rise in AlGaN/GaN HEMT with Graphene Layers

X-Band High-Efficiency Continuous Class B Power Amplifier Gan Mmic Assisted By Input Second-Harmonic Tuning

High-Temperature Characterization of AlGaN Channel High Electron Mobility Transistor Based on Silicon Substrate

A Temperature Analysis of High-power AlGaN/GaN HEMTs

Temperature Dependence and Thermal Stability of Planar-Integrated Enhancement/Depletion-Mode Algan/Gan Hemts and Digital Circuits

The degradation mechanism of high power S-band AlGaN/GaN HEMTs under high temperature

High Temperature Robustness of Enhancement-Mode p-GaN-Gated AlGaN/GaN HEMT Technology

A High-Efficiency Class-E GaN HEMT Power Amplifier at 1.9 GHz

Characteristics of AlGaN/GaN High Electron Mobility Transistor Temperature Sensor

High power applications for GaN-based devices

Monolithic Comparator and Sawtooth Generator of AlGaN/GaN MIS-HEMTs with Threshold Voltage Modulation for High-Temperature Applications

A GaN-Based Wireless Monitoring System for High-Temperature Applications

AlGaN/GaN Heterojunction Bipolar Transistors With High Current Gain and Low Specific on-Resistance

Boosted High-Temperature Electrical Characteristics of AlGaN/GaN HEMTs with Rationally Designed Compositionally Graded AlGaN Back Barriers

Investigation of enhancement mode HfO2 insulated N-polarity GaN/InN/GaN/In0.9Al0.1N heterostructure MISHEMT for high-frequency applications

Effect of High Temperature on the Performance of AlGaN/GaN T-Gate High-Electron Mobility Transistors With ~140-nm Gate Length

1-mm gate periphery AlGaN/AlN/GaN HEMTs on SiC with output power of 9.39W at 8GHz

High Temperature Characteristics of GaN-Based Inverter Integrated With Enhancement-Mode (E-Mode) MOSFET and Depletion-Mode (D-Mode) HEMT

A L-Band 1003-W AlGaN/GaN HEMT Power Amplifier for Operation at 100V Bias