Effect of Hot Dip Silicon-Plating Temperature on Microstructure Characteristics of Silicide Coating on Tungsten Substrate

Yingyi Zhang,Junmao Qie,Kunkun Cui,Tao Fu,Xuelian Fan,Jie Wang,Xu Zhang
DOI: https://doi.org/10.1016/j.ceramint.2019.10.270
IF: 5.532
2020-01-01
Ceramics International
Abstract:W-silicide coatings were deposited on tungsten substrate by using hot dip silicon-plating method under various temperatures. The phase composition, microstructure, and concentration distribution of elements were investigated. The results show that the W-silicide coatings consist of WSi2 layer and interface layer (W5Si3 layer), and the WSi2 coatings have a strong preferred orientation on the (211) and (206) crystal faces. The hot dip temperature has a significant effect on thicknesses and grain sizes of coatings. With the increase of hot dip temperature, the thicknesses of WSi2 layer and W5Si3 layer, and grain sizes increase obviously. Moreover, a high silicon concentration is observed at coating surface when the temperature is 1560 degrees C, and the highest silicon concentration is about 46 wt% (84.79 at.%).
What problem does this paper attempt to address?