Abstract:The mechanical properties of Czochralski (Cz) silicon wafers dictate fundamental limits on the fabrication of diverse electronic devices. Certain impurities with sufficiently high concentrations may affect the mechanical properties of Cz silicon. The underlying mechanisms for such influences have been being explored in the past decades. In this work, the effects of antimony (Sb)- and tin (Sn)-doping at 1018 cm−3 level on the mechanical properties of Czochralski (Cz) silicon have been comparatively investigated. Since Sb and Sn have quite close tetrahedral covalent radii in silicon, the lattice strains resulted from Sb- and Sn-doping and their consequent effects on the mechanical properties of silicon are approximately identical. In silicon, Sb is an electrically active impurity while Sn is a neutral one. Therefore, the present work can essentially reveal the role of electrical activity of Sb playing in the mechanical properties of Cz silicon. It is found that Sb-doped Cz (Sb-Cz) silicon possesses a slightly higher hardness than Sn-doped Cz (Sn-Cz) silicon. Moreover, the dislocation gliding at 500 or 600 °C in Sb-Cz silicon requires a much larger critical resolved shear stress than that in Sn-Cz silicon. At such two temperatures, Sb-Cz silicon remains to be n-type in electrical conduction. The aforementioned two results are believed to be ascribed to the resistance of dislocation motion by the Coulomb interaction between the positively charged Sb ions and the dislocations that are deep-level acceptors thus being negatively charged in Sb-Cz silicon. As the temperature is increased to 700 °C and above, the dislocation gliding in Sb-Cz silicon is not substantially different from that in Sn-Cz silicon. At such elevated temperatures, Sb-Cz silicon becomes intrinsic in electrical conduction like Sn-Cz silicon. In this context, there is no Coulomb interaction between Sb ions and dislocations anymore to impede the dislocation gliding in Sb-Cz silicon. In addition, it is found that the indentation fracture toughness of Sb-Cz is almost the same as that of Sn-Cz silicon. Actually, the fracture of silicon is essentially a cleavage process, to which the electrical activity of Sb is irrelevant.

The Influence of Substrate Doping on Silicide Formation with Tungsten Deposited from Tungsten Hexafluoride

Site preference of S-doping and its influence on the properties of a Ni/Ni3Al interface

An Experimental Study of the Influence of Oxygen on Silicide Formation with Tungsten Deposited from Tungsten Hexafluoride

Silicide Formation with Tungsten Deposited from W-LPCVD; the Role of Back Surface Conditions

Germanium Doping of Si Substrates for Improved Device Characteristics and Yield

Effect of Hot Dip Silicon-Plating Temperature on Microstructure Characteristics of Silicide Coating on Tungsten Substrate

Growth of WSi 2 in Phosphorous-Implanted W/«Si» Couples

Ion-Beam-Modified Interfacial Growth of Tungsten Disilicide

Effects of Antimony- and Tin-Doping on the Mechanical Propertiesof Czochralski Silicon: Revealing the Role of Electrical Activity of Antimony

Investigation of Chemically Vapour Deposited Tungsten and Tungsten Silicide As Contacts to N+ and P+ Silicon Areas

Effect of Substrate Doping Concentration on Quantum Well States of Pb Island Grown on Si(111)

Synthesis WSi2 Coating on W Substrate by HDS Method with Various Deposition Times

Silicon Doping Effect on the Crystallization Behavior of Ge2Sb2Te5 Film

Evolution of surface morphology, roughness and texture of tungsten disilicide coatings on tungsten substrate

Ab Initio Molecular Dynamics Simulation Study on Phosphorus/Boron Co-Doped Si Nanocrystals/SiO2 Core/Shell Structures

Effects of substrate bias and temperature during Titanium sputter-deposition on the phase formation in TiSi2

Co-evaporative Sb doping and crystalline quality in Si molecular beam epitaxy

X-ray photoelectron spectroscopy study of NiSi formation on shallow junctions

Nickel Silicide Formation on Shallow Junctions

The Influence of Dopants on the Reaction Between Liquid Silicon and Silica

Aluminum-Assisted Crystallization and P-Type Doping of Polycrystalline Si