3D MEMS In-Chip Solenoid Inductor with High Inductance Density for Power MEMS Device

Tiantong Xu,Jiamian Sun,Hanxiao Wu,Haiwang Li,Hanqing Li,Jingchao Xia,Zhi Tao,Martin A. Schmidt
DOI: https://doi.org/10.1109/led.2019.2941003
IF: 4.8157
2019-01-01
IEEE Electron Device Letters
Abstract:In this letter, we report the design and measurement of a 3D solenoid inductor that is embedded in a Si substrate and can integrate an iron core. Various inductor designs were fabricated with good structural integrity and repeatability via a CMOS-compatible MEMS fabrication process. The average inductance and quality factor peak-to-peak variation of the inductors was below 10%, which indicates that the fabrication process is repeatable. Among the inductors without iron cores, the highest quality factor (37.6 at 21 MHz) was found in a 5-turn inductor, and the highest inductance and inductance density (respectively, 86.6 nH and 21.7 nH/mm(2)) were found in a 20-turn inductor. Among the iron-core inductors, the 15-turn inductor had an inductance of 1063 nH and an inductance density of 354.3 nH/mm(2), nearly 18 times higher than the same design without an iron core, which is the highest inductance density for a MEMS microinductor to the best of our knowledge. This type of inductor is an important component in RF MEMS and electromagnetic power MEMS devices and can improve their performance and efficiency.
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