Abstract:In this paper, an In 0.53 Ga 0.47 As/In 0.52 Al 0.48 As heterojunction dopingless tunnel field-effect transistor (HDL-TFET) with an HfO 2 /SiO 2 heterogate dielectric is proposed, where the N + -pocket with variable electron concentration can be formed by adjusting the length of source-side channel (L SC ) based on the charge plasma concept, instead of employing conventional ion implantation or dual-material gate techniques. It aims to improve the device performance and simplify the device fabrication. At the drain bias of 0.3 V, numerical simulations show that the on-state current (I ON ) of the HDL-TFET with L SC = 4 nm can approach ~10 −5 A/ <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\mu \text{m}$ </tex-math></inline-formula> that is far higher than that of the Si-DL-TFET (~10 −10 A/ <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\mu \text{m}$ </tex-math></inline-formula> ), and the average subthreshold swing (SS avg ) can approach 36.6 mV/decade that is significantly lower than that of the Si-DL-TFET (89.2 mV/decade). It is also found that the drain-induced barrier lowering (DIBL) effect and the ambipolar current can be effectively suppressed in the HDL-TFET because of an existence of heterojunction. Under the condition of low gate and drain biases, the HDL-TFET exhibits peak values of the cutoff frequency (f T ) and the maximum oscillation frequency (f max ) approaching 13 and 4.73 GHz, respectively, while the Si-DL-TFET yields those of 8.05 and 2.26 GHz, respectively, under relatively higher biases. It indicates that the HDL-TFET is a promising device for low-power consumption radio frequency applications.

Design and Investigation of a Dual Material Gate Arsenic Alloy Heterostructure Junctionless TFET with a Lightly Doped Source

Germanium-source L-shaped TFET with dual in-line tunneling junction

A Novel High-Performance Planar InAs/GaSb Face-Tunneling FET With Implanted Drain for Leakage Current Reduction

Novel SiGe/Si Heterojunction Double-Gate Tunneling FETs with a Heterogate Dielectric for High Performance

Digital Performance Assessment of the Dual-Material Gate GaAs/InAs/Ge Junctionless TFET

Characteristics of InAs/GaSb Line-Tunneling FETs with Buried Drain Technique

An In0.53Ga0.47As/In0.52Al0.48As Heterojunction Dopingless Tunnel FET with a Heterogate Dielectric for High Performance

A Novel Planar InAs/Si Hetero-TFET with Buried Drain Design and Face-tunneling Technique

High performance of junctionless MOSFET with asymmetric gate

An In<sub>0.53</sub>Ga<sub>0.47</sub>As/In<sub>0.52</sub>Al<sub>0.48</sub>As Heterojunction Dopingless Tunnel FET With a Heterogate Dielectric for High Performance

Design, simulation and analog/RF performance evaluation of a hetero-stacked source dual metal T-shaped gate tunnel-FET in thermally variable environments

Investigation of SiGe/Si heterojunction inductive line tunneling TFET with source Schottky contact for prospect ultra-low power applications

A High-Performance Gate Engineered InGaN Dopingless Tunnel FET

Performance Analysis of Heterojunction and Hetero Dielectric Triple Material Double Gate TFET

Heteromaterial-gate line tunnel field-effect transistor based on Si/Ge heterojunction*

An InGaAs-based Fin-EHBTFET with a heterogate and barrier layer for high performance

Analysis of III-V material-based dual source T-channel junction-less TFET with metal implant for improved DC and RF performance

A GaSb/In0.4Ga0.6As Heterojunction Z-Shaped Tunnel Field-Effect Transistor with High Performance

Design of a Dual-Material Gate LDMOS

A Novel Tunnel FET Design Through Adaptive Bandgap Engineering with Constant Sub-Threshold Slope over 5 Decades of Current and High $\text{i}_{\mathrm {on}}/\text{i}_{\mathrm {OFF}}$ Ratio

A Numerical Study on Graphene Nanoribbon Heterojunction Dual-Material Gate Tunnel Fet